Infineon Technologies AG 2ED21091S06FXUMA1

The 2ED21091S06F is a 650 V half-bridge gate driver with an integrated bootstrap diode, designed to drive IGBTs and enhancement-mode N-channel MOSFETs in power electronic applications. It is housed in an 8-lead DSO package and features independent high- and low-side output channels with an internal deadtime of 540 ns, programmable up to 2.7 μs via an external resistor. The device supports logic input compatibility at 3.3 V, 5 V, and 15 V, operates with a supply voltage of 10 V to 20 V, and tolerates negative voltage transients on the VS pin up to -11 V. It includes undervoltage lockout for both channels, Schmitt trigger inputs with hysteresis, and meets RoHS compliance. The part is qualified for industrial applications according to JEDEC JESD47/20/22 standards.