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Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF2804WL

Description
MOSFET N-CH 40V 240A TO262-3
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRF2804WL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRF2804WL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF2804WL
MOSFET N-CH 40V 240A TO262-3

MOSFET N-CH 40V 240A TO262-3

Supplier's Site
 - 7849118 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 240 A, 295 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.8 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-262WL Mounting Type = Through Hole Transistor Configuration = Single

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 240 A, 295 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.8 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-262WL
Mounting Type = Through Hole
Transistor Configuration = Single

Supplier's Site
 - 7849118P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 240 A, 295 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.8 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-262WL Mounting Type = Through Hole Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 240 A, 295 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.8 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-262WL
Mounting Type = Through Hole
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Single FETs, MOSFETs - AUIRF2804WL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AUIRF2804WL-ND
Single FETs, MOSFETs AUIRF2804WL-ND
N-Channel 40V 240A (Tc) 300W (Tc) Through Hole TO-262-3 Wide

N-Channel 40V 240A (Tc) 300W (Tc) Through Hole TO-262-3 Wide

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2804WL - 1149777-AUIRF2804WL - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2804WL
1149777-AUIRF2804WL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2804WL 1149777-AUIRF2804WL
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1149777-AUIRF2804WL Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149777-AUIRF2804WL
Manufacturer Homepage: www.irf.com
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V 295A 1.8mOhm Automotive MOSFET

MOSFET 40V 295A 1.8mOhm Automotive MOSFET

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. DigiKey Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AUIRF2804WL 7849118 AUIRF2804WL-ND 1149777-AUIRF2804WL AUIRF2804WL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2804WL MOSFET
Package Type Through Hole TO-262WL TO-262-3 Wide Leads SOT3
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