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Infineon Technologies AG Single FETs, MOSFETs AIMW120R060M1HXKSA1

Description
N-Channel 1200V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
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Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-AIMW120R060M1HXKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-AIMW120R060M1HXKSA1-ND
Single FETs, MOSFETs 448-AIMW120R060M1HXKSA1-ND
N-Channel 1200V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41

N-Channel 1200V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41

Supplier's Site Datasheet
Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs -  - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs Series: Automotive, AEC-Q101, CoolSiC™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ)

Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series: Automotive, AEC-Q101, CoolSiC™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AIMW120R060M1HXKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AIMW120R060M1HXKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AIMW120R060M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3

1200V COOLSIC MOSFET PG-TO247-3

Supplier's Site
Mosfet, Sic, N-Ch, 1.2Kv, 36A, To-247 Rohs Compliant Infineon - 52AJ4419 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 36A, To-247 Rohs Compliant Infineon
52AJ4419
Mosfet, Sic, N-Ch, 1.2Kv, 36A, To-247 Rohs Compliant Infineon 52AJ4419
MOSFET, SIC, N-CH, 1.2KV, 36A, TO-247 ROHS COMPLIANT: YES

MOSFET, SIC, N-CH, 1.2KV, 36A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-AIMW120R060M1HXKSA1-ND AIMW120R060M1HXKSA1 52AJ4419
Product Name Single FETs, MOSFETs Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Sic, N-Ch, 1.2Kv, 36A, To-247 Rohs Compliant Infineon
Polarity N-Channel N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-3 SOT3 TO-247; TO-247-3 TO-3; TO-247
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