Infineon Technologies AG Discrete Semiconductor AUIRFB4410

MOSFET N-CH 100V 75A TO220AB

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149810-AUIRFB4410
Manufacturer Homepage: www.irf.com
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Industrial

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 88 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 10 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 88 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 10 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 88 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 10 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3

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AUIRFB4410 - 75V-100V N-Channel Automotive MOSFET

AUIRFB4410 - 75V-100V N-Channel Automotive MOSFET