The 2EDL8033G4C is a high-side and low-side gate driver IC designed to drive MOSFETs in half-bridge configurations, with 3 A peak source current and 6 A sink current capability. It operates from an 8 V to 17 V supply voltage, supports up to 120 V bootstrap voltage, and includes an integrated bootstrap diode. The device is offered in a PG-VDSON-10-2 package, measuring 4 mm x 4 mm, and is specified for operation from -40°C to 125°C junction temperature. It features independent TTL-compatible inputs, undervoltage lockout on both channels, propagation delay under 50 ns, and typical delay matching of 2 ns. The part is qualified for industrial applications according to JEDEC JESD47/20/22 standards.
The 2EDL8033G4C is designed to drive both high-side and low-side MOSFETs
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2EDL8033G4CXTMA1 |
| Package Type | PG-VDSON-1 |
