Infineon Technologies AG 2EDS9265HXUMA1

Description
Half Bridge Based MOSFET Driver
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Description
Half Bridge Based MOSFET Driver
Request a Quote
Datasheet
Datasheet Summary
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The 2EDS9265HXUMA1 is a dual-channel reinforced isolated MOSFET gate driver with 4A/8A source/sink output current, designed for fast-switching power systems. It operates with an input-side supply voltage of 3.3V and output-side supply voltages from 4.5V to 20V, featuring an 8V output UVLO threshold. The device provides reinforced isolation certified to UL1577 (5700V RMS), DIN V VDE V 0884-10 (8kV transient), and DIN EN IEC 62368-1, with a typical propagation delay of 37ns and channel-to-channel mismatch of 3ns. It is housed in a wide-body DSO-16 package measuring 10.3mm × 10.3mm and supports junction temperatures from -40°C to +150°C. The part is RoHS compliant and meets JEDEC industrial qualification standards.

Datasheet Summary
Powered by GS/AI

The 2EDS9265HXUMA1 is a dual-channel reinforced isolated MOSFET gate driver with 4A/8A source/sink output current, designed for fast-switching power systems. It operates with an input-side supply voltage of 3.3V and output-side supply voltages from 4.5V to 20V, featuring an 8V output UVLO threshold. The device provides reinforced isolation certified to UL1577 (5700V RMS), DIN V VDE V 0884-10 (8kV transient), and DIN EN IEC 62368-1, with a typical propagation delay of 37ns and channel-to-channel mismatch of 3ns. It is housed in a wide-body DSO-16 package measuring 10.3mm × 10.3mm and supports junction temperatures from -40°C to +150°C. The part is RoHS compliant and meets JEDEC industrial qualification standards.

Suppliers

Company
Product
Description
Supplier Links
 - 2EDS9265HXUMA1 - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based MOSFET Driver

Half Bridge Based MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2EDS9265HXUMA1
Package Type PG-DSO-16
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