The 2EDN852x is a dual-channel gate driver designed to drive MOSFETs, GaN power devices, and IGBTs in high-efficiency SMPS and motor control applications. It features two independent 5A output channels with true rail-to-rail drive capability, 5ns fast slew rates, and 17ns propagation delay precision. The device includes 4.2V and 8V UVLO options for safty, and -10V robustness on control inputs to withstand parasitic ground inductances. Channel-to-channel propagation delay matching is typ. 1ns, enabling parallel operation. It is available in industry-standard DSO 8-pin, TSSOP 8-pin, and WSON 8-pin packages. Reverse current robustness eliminates the need for external output protection diodes.
Gate Driver N-Channel MOSFET 2 Driver
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2EDN8523GXTMA1 |
| Polarity | N-Channel |
