Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 2N6770

Description
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A 2N6770 with Hermetic Packaging IRF450 A IRF450 with Hermetic Packaging JANTX2N6770 A JANTX2N6770 with Hermetic Packaging JANTXV2N6770 A JANTXV2N6770 with Hermetic Packaging
  • High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 - 2N6770 - Infineon Technologies AG
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Description
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A 2N6770 with Hermetic Packaging IRF450 A IRF450 with Hermetic Packaging JANTX2N6770 A JANTX2N6770 with Hermetic Packaging JANTXV2N6770 A JANTXV2N6770 with Hermetic Packaging
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Datasheet
Datasheet Summary
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The 2N6770 is a hermetically sealed, N-channel HEXFET® MOSFET in a TO-204AA (TO-3) package, rated for 500V drain-to-source voltage and 12A continuous drain current at 25°C. It features repetitive avalanche capability with 15 mJ energy rating and a peak diode recovery dv/dt of 3.5 V/ns. The device has a maximum on-state resistance of 0.400 Ω at 10V gate bias, a junction-to-case thermal resistance of 0.83°C/W, and operates from -55°C to +150°C. It meets MIL-STD-750, Method 1020 for ESD classification Class 3A and is manufactured under MIL-PRF-19500. The case weight is 11.5 g typical.

Datasheet Summary
Powered by GS/AI

The 2N6770 is a hermetically sealed, N-channel HEXFET® MOSFET in a TO-204AA (TO-3) package, rated for 500V drain-to-source voltage and 12A continuous drain current at 25°C. It features repetitive avalanche capability with 15 mJ energy rating and a peak diode recovery dv/dt of 3.5 V/ns. The device has a maximum on-state resistance of 0.400 Ω at 10V gate bias, a junction-to-case thermal resistance of 0.83°C/W, and operates from -55°C to +150°C. It meets MIL-STD-750, Method 1020 for ESD classification Class 3A and is manufactured under MIL-PRF-19500. The case weight is 11.5 g typical.

Suppliers

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High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 - 2N6770 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770
2N6770
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 2N6770
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A 2N6770 with Hermetic Packaging IRF450 A IRF450 with Hermetic Packaging JANTX2N6770 A JANTX2N6770 with Hermetic Packaging JANTXV2N6770 A JANTXV2N6770 with Hermetic Packaging

500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging

Benefits

  1. Hermetically packaged power MOSFET
  2. Packaged on a MIL-PRF-19500 manufacturing line

Similar Parts

2N6770

A 2N6770 with Hermetic Packaging

IRF450

A IRF450 with Hermetic Packaging

JANTX2N6770

A JANTX2N6770 with Hermetic Packaging

JANTXV2N6770

A JANTXV2N6770 with Hermetic Packaging

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
500V 12A MOSFET Transistor
278-2N6770
500V 12A MOSFET Transistor 278-2N6770
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3 Product overview: 2N6770 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N6770 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3 Product overview: 2N6770 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N6770 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N6770 278-2N6770
Product Name High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 500V 12A MOSFET Transistor
Polarity N-Channel; N
Package Type M-TO204-3
Packing Method Tray; TRAY
MOSFET Operating Mode Enhancement
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