Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R120M1T AIMZH120R120M1T

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications. Summary of Features Very low switching losses Increased turn-on voltage VGS(on)= 20 V Best in class switching energy Lowest device capacitances low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on Reduced total gate charge QGtot for lower driving power and losses .XT die attach technology for best in class thermal performance Sense pin for optimized switching performance Suitable for HV creepage requirements Thinner leads for reduced risk of solder bridges Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential Applications On-board charger DC/DC converter Auxiliary drives