Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327 2N7002L6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 197476-2N7002L6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: 2N7002 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.6nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): 2N7002K; NX7002BKR; RK7002BMT116; 2N7002K,215; Introduction Date: February 11, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 197476-2N7002L6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: 2N7002 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.6nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): 2N7002K; NX7002BKR; RK7002BMT116; 2N7002K,215; Introduction Date: February 11, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327 - 197476-2N7002L6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327
197476-2N7002L6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327 197476-2N7002L6327
Manufacturer: Infineon Technologies Win Source Part Number: 197476-2N7002L6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: 2N7002 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.6nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): 2N7002K; NX7002BKR; RK7002BMT116; 2N7002K,215; Introduction Date: February 11, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 197476-2N7002L6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: 2N7002
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 10V
Max Input Capacitance: 20pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): 2N7002K; NX7002BKR; RK7002BMT116; 2N7002K,215;
Introduction Date: February 11, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
Automotive 60V 300MA SOT-23 MOSFET Transistor
285-2N7002L6327
Automotive 60V 300MA SOT-23 MOSFET Transistor 285-2N7002L6327
MOSFET N-CH 60V 300MA SOT-23 / Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R Product overview: 2N7002L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 300MA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 300MA, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2N7002L6327 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 300MA SOT-23 / Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R Product overview: 2N7002L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 300MA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 300MA, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2N7002L6327 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 197476-2N7002L6327 285-2N7002L6327
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327 Automotive 60V 300MA SOT-23 MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 500 milliwatts 500 milliwatts
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