Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002DW L6327 2N7002DW L6327

Manufacturer: Infineon Technologies
Win Source Part Number: 197475-2N7002DW L6327
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: 2N7002DW
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 10V
Max Input Capacitance: 20pF @ 25V
Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SSM6N7002FU(T5L,F); SSM6N7002FU(BRA); SSM6N7002FU(BRA,F); SSM6N7002FU(L,F,T);
Introduction Date: February 12, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 60V 0.3A SOT363 Product overview: 2N7002DW L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-2N7002DW L6327 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 60V 300mA 500mW Surface Mount PG-SOT363-6