Infineon Technologies AG 2EDL05N06PFXUMA1

Description
Half Bridge Based IGBT/MOSFET Driver, PDSO8
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Description
Half Bridge Based IGBT/MOSFET Driver, PDSO8
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Datasheet
Datasheet Summary
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The 2EDL05N06PF is a 600 V half-bridge gate driver with an integrated bootstrap diode, designed for driving N-channel MOSFETs or IGBTs in high-side and low-side configurations. It is packaged in DSO-8 and operates with a gate drive supply range of 10 V to 20 V. The output current capability is 0.5 A sourcing and 0.7 A sinking. It features undervoltage lockout for both channels, 3.3 V, 5 V, and 15 V logic input compatibility, and is tolerant to negative transients up to -100 V on the VS pin. Propagation delay matching is 60 ns maximum. It is qualified for industrial applications per JEDEC JESD47/20/22 and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The 2EDL05N06PF is a 600 V half-bridge gate driver with an integrated bootstrap diode, designed for driving N-channel MOSFETs or IGBTs in high-side and low-side configurations. It is packaged in DSO-8 and operates with a gate drive supply range of 10 V to 20 V. The output current capability is 0.5 A sourcing and 0.7 A sinking. It features undervoltage lockout for both channels, 3.3 V, 5 V, and 15 V logic input compatibility, and is tolerant to negative transients up to -100 V on the VS pin. Propagation delay matching is 60 ns maximum. It is qualified for industrial applications per JEDEC JESD47/20/22 and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - 2EDL05N06PFXUMA1 - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based IGBT/MOSFET Driver, PDSO8

Half Bridge Based IGBT/MOSFET Driver, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 2EDL05N06PFXUMA1
Package Type SO-8; PG-DSO-8
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