Infineon Technologies AG Gate Driver ICs 2EDL8024G

Description
Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications DIN rail power supplies Light electric vehicles (LEV) Multicopters and drones Telecommunication infrastructure Designers who used this product also designed with BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet
Description
Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications DIN rail power supplies Light electric vehicles (LEV) Multicopters and drones Telecommunication infrastructure Designers who used this product also designed with BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 2EDL8024G - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2EDL8024G
Gate Driver ICs 2EDL8024G
Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications DIN rail power supplies Light electric vehicles (LEV) Multicopters and drones Telecommunication infrastructure Designers who used this product also designed with BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSZ0500NSI | N-Channel Power MOSFET IQE065N10NM5 | N-Channel Power MOSFET IQE030N06NM5CG | N-Channel Power MOSFET IQE013N04LM6CG | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET 1 2 3

Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G

The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.

This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase.

All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.


Summary of Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Potential Applications

  • Telecom DC-DC converter
  • Datacom DC-DC converter
  • Two switch forward converter
  • Active clamp forward converter
  • Class D audio amplifier

Applications

  • DIN rail power supplies
  • Light electric vehicles (LEV)
  • Multicopters and drones
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSZ0500NSI |
    N-Channel Power MOSFET
  • IQE065N10NM5 |
    N-Channel Power MOSFET
  • IQE030N06NM5CG |
    N-Channel Power MOSFET
  • IQE013N04LM6CG |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSZ0500NSI |
    N-Channel Power MOSFET
  • IQE065N10NM5 |
    N-Channel Power MOSFET
  • IQE030N06NM5CG |
    N-Channel Power MOSFET
  • IQE013N04LM6CG |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8024G
Product Name Gate Driver ICs
Driver Type High-side; Low-side
Output Current 4 amps
Supply Voltage 8 to 20 volts
Propagation Delay 45 ns
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