Infineon Technologies AG Power - Gate Driver ICs - Automotive gate driver ICs - EiceDRIVER™ isolated gate driver ICs for EV - 1EDI3035AS 1EDI3035AS

Description
The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection. Summary of Features For SiC MOSFET of volt. class up to 1200 CMTI up to 150 V/ns 8 kV peak reinforc. insulation (DIN VDE) Integrated booster (up to 20 A peak) Integrated active Miller clamp 12- bit ADC Split outputs TON and TOFF DESAT protection Config. ext. soft turn-off functionality Safety inputs on both side ISO 26262 SEooC (saf. req. up to ASIL B) Benefits Pre-config. to drive latest SiC MOSFET Safety doc. aids system safety design Comprehensive safety features Supports ASIL D on system level AEC-Q100 qualified Lean packaging (DSO-20) Potential Applications Traction inverter Auxiliary inverter HV-LV DC-DC converter Fuel-cell compressor EESM (External Excited Synchronous Motor) Product Variant Driver support Short Circuit Protection ADC Output Stage Capability 1EDI3025AS IGBT DESAT yes 20A 1EDI3026AS IGBT OCP yes 20A 1EDI3028AS IGBT DESAT yes, w/o current source 15A 1EDI3035AS SiC DESAT yes 20A 1EDI3038AS SiC DESAT no 15A Product Variant Driver support Short Circuit Protection ADC Output Stage Capability
Request a Quote Datasheet
Description
The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection. Summary of Features For SiC MOSFET of volt. class up to 1200 CMTI up to 150 V/ns 8 kV peak reinforc. insulation (DIN VDE) Integrated booster (up to 20 A peak) Integrated active Miller clamp 12- bit ADC Split outputs TON and TOFF DESAT protection Config. ext. soft turn-off functionality Safety inputs on both side ISO 26262 SEooC (saf. req. up to ASIL B) Benefits Pre-config. to drive latest SiC MOSFET Safety doc. aids system safety design Comprehensive safety features Supports ASIL D on system level AEC-Q100 qualified Lean packaging (DSO-20) Potential Applications Traction inverter Auxiliary inverter HV-LV DC-DC converter Fuel-cell compressor EESM (External Excited Synchronous Motor) Product Variant Driver support Short Circuit Protection ADC Output Stage Capability 1EDI3025AS IGBT DESAT yes 20A 1EDI3026AS IGBT OCP yes 20A 1EDI3028AS IGBT DESAT yes, w/o current source 15A 1EDI3035AS SiC DESAT yes 20A 1EDI3038AS SiC DESAT no 15A Product Variant Driver support Short Circuit Protection ADC Output Stage Capability
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - Automotive gate driver ICs - EiceDRIVER™ isolated gate driver ICs for EV - 1EDI3035AS - 1EDI3035AS - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - Automotive gate driver ICs - EiceDRIVER™ isolated gate driver ICs for EV - 1EDI3035AS
1EDI3035AS
Power - Gate Driver ICs - Automotive gate driver ICs - EiceDRIVER™ isolated gate driver ICs for EV - 1EDI3035AS 1EDI3035AS
The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection. Summary of Features For SiC MOSFET of volt. class up to 1200 CMTI up to 150 V/ns 8 kV peak reinforc. insulation (DIN VDE) Integrated booster (up to 20 A peak) Integrated active Miller clamp 12- bit ADC Split outputs TON and TOFF DESAT protection Config. ext. soft turn-off functionality Safety inputs on both side ISO 26262 SEooC (saf. req. up to ASIL B) Benefits Pre-config. to drive latest SiC MOSFET Safety doc. aids system safety design Comprehensive safety features Supports ASIL D on system level AEC-Q100 qualified Lean packaging (DSO-20) Potential Applications Traction inverter Auxiliary inverter HV-LV DC-DC converter Fuel-cell compressor EESM (External Excited Synchronous Motor) Product Variant Driver support Short Circuit Protection ADC Output Stage Capability 1EDI3025AS IGBT DESAT yes 20A 1EDI3026AS IGBT OCP yes 20A 1EDI3028AS IGBT DESAT yes, w/o current source 15A 1EDI3035AS SiC DESAT yes 20A 1EDI3038AS SiC DESAT no 15A Product Variant Driver support Short Circuit Protection ADC Output Stage Capability

The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection.


Summary of Features

  • For SiC MOSFET of volt. class up to 1200
  • CMTI up to 150 V/ns
  • 8 kV peak reinforc. insulation (DIN VDE)
  • Integrated booster (up to 20 A peak)
  • Integrated active Miller clamp
  • 12- bit ADC
  • Split outputs TON and TOFF
  • DESAT protection
  • Config. ext. soft turn-off functionality
  • Safety inputs on both side
  • ISO 26262 SEooC (saf. req. up to ASIL B)

Benefits

  • Pre-config. to drive latest SiC MOSFET
  • Safety doc. aids system safety design
  • Comprehensive safety features
  • Supports ASIL D on system level
  • AEC-Q100 qualified
  • Lean packaging (DSO-20)

Potential Applications

  • Traction inverter
  • Auxiliary inverter
  • HV-LV DC-DC converter
  • Fuel-cell compressor
  • EESM (External Excited Synchronous Motor)

Product Variant Driver support Short Circuit Protection ADC Output Stage Capability

1EDI3025AS

IGBT DESAT yes 20A

1EDI3026AS

IGBT OCP yes 20A
1EDI3028AS IGBT DESAT yes, w/o current source 15A
1EDI3035AS SiC DESAT yes 20A
1EDI3038AS SiC DESAT no 15A
Product Variant Driver support Short Circuit Protection ADC Output Stage Capability

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 1EDI3035AS
Product Name Power - Gate Driver ICs - Automotive gate driver ICs - EiceDRIVER™ isolated gate driver ICs for EV - 1EDI3035AS
Driver Type High-side
Output Current 20 amps
Supply Voltage 3 to 5.5 volts
Propagation Delay 60 ns
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