Infineon Technologies AG Power - Gate Driver ICs - 2EDF7275F 2EDF7275F

Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI (Common Mode Noise Immunity). The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1A/2A peak current product variant, the EiceDRIVER™ 2EDF7275F, is available in the DSO-16 narrow body package with 4mm creepage distance. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output-to-output channel isolation Input-to-output channel isolation Benefits Power efficiency and high resolution PWM control Cooler package at smaller form factor Protection and safe operation Flexible assignment of any driver channel Floating gate drive & regulatory safety System values Enabling higher power stage efficiency and higher power density designs Improving long term competitive cost position, integration and mass manufacturability Improved end-product lifetime by improved safe operation of power switches Lower EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin source MOSFETs Meeting requirements to build isolated AC-DC, DC-DC half bridges topologies Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Smart Grid Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging Power conversion Telecommunication infrastructure Designers who used this product also designed with BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IDH20G65C6 | CoolSiC™ Schottky Diodes BSC160N15NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC025N08LS5 | N-Channel Power MOSFET IDH10G65C5 | CoolSiC™ Schottky Diodes IPT015N10N5 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI (Common Mode Noise Immunity). The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1A/2A peak current product variant, the EiceDRIVER™ 2EDF7275F, is available in the DSO-16 narrow body package with 4mm creepage distance. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output-to-output channel isolation Input-to-output channel isolation Benefits Power efficiency and high resolution PWM control Cooler package at smaller form factor Protection and safe operation Flexible assignment of any driver channel Floating gate drive & regulatory safety System values Enabling higher power stage efficiency and higher power density designs Improving long term competitive cost position, integration and mass manufacturability Improved end-product lifetime by improved safe operation of power switches Lower EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin source MOSFETs Meeting requirements to build isolated AC-DC, DC-DC half bridges topologies Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Smart Grid Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging Power conversion Telecommunication infrastructure Designers who used this product also designed with BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IDH20G65C6 | CoolSiC™ Schottky Diodes BSC160N15NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC025N08LS5 | N-Channel Power MOSFET IDH10G65C5 | CoolSiC™ Schottky Diodes IPT015N10N5 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDF7275F - 2EDF7275F - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDF7275F
2EDF7275F
Power - Gate Driver ICs - 2EDF7275F 2EDF7275F
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI (Common Mode Noise Immunity). The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1A/2A peak current product variant, the EiceDRIVER™ 2EDF7275F, is available in the DSO-16 narrow body package with 4mm creepage distance. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output-to-output channel isolation Input-to-output channel isolation Benefits Power efficiency and high resolution PWM control Cooler package at smaller form factor Protection and safe operation Flexible assignment of any driver channel Floating gate drive & regulatory safety System values Enabling higher power stage efficiency and higher power density designs Improving long term competitive cost position, integration and mass manufacturability Improved end-product lifetime by improved safe operation of power switches Lower EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin source MOSFETs Meeting requirements to build isolated AC-DC, DC-DC half bridges topologies Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Smart Grid Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging Power conversion Telecommunication infrastructure Designers who used this product also designed with BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IDH20G65C6 | CoolSiC™ Schottky Diodes BSC160N15NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC025N08LS5 | N-Channel Power MOSFET IDH10G65C5 | CoolSiC™ Schottky Diodes IPT015N10N5 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9351VSJ | Automotive CAN transceivers IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing

The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI (Common Mode Noise Immunity).

The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1A/2A peak current product variant, the EiceDRIVER™ 2EDF7275F, is available in the DSO-16 narrow body package with 4mm creepage distance.


Summary of Features

  • Fast power switching with accurate timing
  • Optimized for area and low cost system BOM
  • Robust design against switching noise
  • Output-to-output channel isolation
  • Input-to-output channel isolation

Benefits

  • Power efficiency and high resolution PWM control
  • Cooler package at smaller form factor
  • Protection and safe operation
  • Flexible assignment of any driver channel
  • Floating gate drive & regulatory safety

System values

  • Enabling higher power stage efficiency and higher power density designs
  • Improving long term competitive cost position, integration and mass manufacturability
  • Improved end-product lifetime by improved safe operation of power switches
  • Lower EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin source MOSFETs
  • Meeting requirements to build isolated AC-DC, DC-DC half bridges topologies

Potential Applications

  • Telecom DC-DC
  • Server
  • Industrial SMPS
  • UPS
  • Battery
  • EV-Charging
  • Smart Grid

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • EV charging
  • Power conversion
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC012N06NS |
    N-Channel Power MOSFET
  • IPP65R110CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • TLE9351VSJ |
    Automotive CAN transceivers
  • IPW60R024CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC020N03LS G |
    N-Channel Power MOSFET
  • IDH20G65C6 |
    CoolSiC™ Schottky Diodes
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC025N08LS5 |
    N-Channel Power MOSFET
  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • IPT015N10N5 |
    N-Channel Power MOSFET
  • BSC012N06NS |
    N-Channel Power MOSFET
  • IPP65R110CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • TLE9351VSJ |
    Automotive CAN transceivers
  • IPW60R024CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDF7275F
Product Name Power - Gate Driver ICs - 2EDF7275F
Driver Type High-side; Low-side; Dual Gate Driver
Output Current 4 amps
Supply Voltage 20 volts
Propagation Delay 37 ns
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