Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing.
The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment.
The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package.
Summary of Features
up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard
Available system standards certificates (GB4943.1)
Channel-to-channel isolation
Accurate timings
High CMTI (common mode rejection) > 150 V/ns
< 2 µs fast UVLO start-up time
Fast active clamping of the output for supply below UVLO
Optional Dead-time control and shoot-through protection (DTC/STP)
Benefits
System safe isolation
Simplified system safety approval
Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments
Perfect signal synchronization for increased system efficiency
Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices
Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC)
Enabling safe operation in bootstrapped system during start-up
Protection against input overlap in case of noisy conditions as output short circuits
Operation at higher bus voltages or in worst pollution degree environments
Potential Applications
Server, telecom, SMPS
EV Off-board chargers
Low-voltage drives and power tools
Solar micro inverter, solar optimizer
Industrial power supply (SMPS, Residential UPS)
Applications
24 V EPS with active steering for commercial vehicles
48 V intermediate bus converter (IBC)
Cordless power tools and outdoor power equipment
Light electric vehicles (LEV)
Designers who used this product also designed with
IRLML2502TRPBF-1 | N-Channel Power MOSFET
IDH10G65C6 | CoolSiC™ Schottky Diodes
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC007N04LS6 | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IMT65R022M1H | Silicon Carbide MOSFET Discretes
BSC520N15NS3 G | N-Channel Power MOSFET
ICE5QR2280BG | CoolSET™ Quasi Resonant
BAS3010A-03W | Schottky Diodes
IRLML2502TRPBF-1 | N-Channel Power MOSFET
IDH10G65C6 | CoolSiC™ Schottky Diodes
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC007N04LS6 | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IMT65R022M1H | Silicon Carbide MOSFET Discretes
BSC520N15NS3 G | N-Channel Power MOSFET
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Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing.
The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment.
The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package.
Summary of Features
- up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard
- Available system standards certificates (GB4943.1)
- Channel-to-channel isolation
- Accurate timings
- High CMTI (common mode rejection) > 150 V/ns
- < 2 µs fast UVLO start-up time
- Fast active clamping of the output for supply below UVLO
- Optional Dead-time control and shoot-through protection (DTC/STP)
Benefits
- System safe isolation
- Simplified system safety approval
- Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments
- Perfect signal synchronization for increased system efficiency
- Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices
- Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC)
- Enabling safe operation in bootstrapped system during start-up
- Protection against input overlap in case of noisy conditions as output short circuits
- Operation at higher bus voltages or in worst pollution degree environments
Potential Applications
- Server, telecom, SMPS
- EV Off-board chargers
- Low-voltage drives and power tools
- Solar micro inverter, solar optimizer
- Industrial power supply (SMPS, Residential UPS)
Applications
- 24 V EPS with active steering for commercial vehicles
- 48 V intermediate bus converter (IBC)
- Cordless power tools and outdoor power equipment
- Light electric vehicles (LEV)
Designers who used this product also designed with
- IRLML2502TRPBF-1 |
N-Channel Power MOSFET
- IDH10G65C6 |
CoolSiC™ Schottky Diodes
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R080P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC007N04LS6 |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMT65R022M1H |
Silicon Carbide MOSFET Discretes
- BSC520N15NS3 G |
N-Channel Power MOSFET
- ICE5QR2280BG |
CoolSET™ Quasi Resonant
- BAS3010A-03W |
Schottky Diodes
- IRLML2502TRPBF-1 |
N-Channel Power MOSFET
- IDH10G65C6 |
CoolSiC™ Schottky Diodes
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R080P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC007N04LS6 |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMT65R022M1H |
Silicon Carbide MOSFET Discretes
- BSC520N15NS3 G |
N-Channel Power MOSFET
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