Infineon Technologies AG Power - Gate Driver ICs - 2EDB8259F 2EDB8259F

Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment. The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package. Summary of Features up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard Available system standards certificates (GB4943.1) Channel-to-channel isolation Accurate timings High CMTI (common mode rejection) > 150 V/ns < 2 µs fast UVLO start-up time Fast active clamping of the output for supply below UVLO Optional Dead-time control and shoot-through protection (DTC/STP) Benefits System safe isolation Simplified system safety approval Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments Perfect signal synchronization for increased system efficiency Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC) Enabling safe operation in bootstrapped system during start-up Protection against input overlap in case of noisy conditions as output short circuits Operation at higher bus voltages or in worst pollution degree environments Potential Applications Server, telecom, SMPS EV Off-board chargers Low-voltage drives and power tools Solar micro inverter, solar optimizer Industrial power supply (SMPS, Residential UPS) Applications 24 V EPS with active steering for commercial vehicles 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Light electric vehicles (LEV) Designers who used this product also designed with IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET ICE5QR2280BG | CoolSET™ Quasi Resonant BAS3010A-03W | Schottky Diodes IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet
Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment. The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package. Summary of Features up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard Available system standards certificates (GB4943.1) Channel-to-channel isolation Accurate timings High CMTI (common mode rejection) > 150 V/ns < 2 µs fast UVLO start-up time Fast active clamping of the output for supply below UVLO Optional Dead-time control and shoot-through protection (DTC/STP) Benefits System safe isolation Simplified system safety approval Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments Perfect signal synchronization for increased system efficiency Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC) Enabling safe operation in bootstrapped system during start-up Protection against input overlap in case of noisy conditions as output short circuits Operation at higher bus voltages or in worst pollution degree environments Potential Applications Server, telecom, SMPS EV Off-board chargers Low-voltage drives and power tools Solar micro inverter, solar optimizer Industrial power supply (SMPS, Residential UPS) Applications 24 V EPS with active steering for commercial vehicles 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Light electric vehicles (LEV) Designers who used this product also designed with IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET ICE5QR2280BG | CoolSET™ Quasi Resonant BAS3010A-03W | Schottky Diodes IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET 1 2 3
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Suppliers

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Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDB8259F - 2EDB8259F - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDB8259F
2EDB8259F
Power - Gate Driver ICs - 2EDB8259F 2EDB8259F
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment. The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package. Summary of Features up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard Available system standards certificates (GB4943.1) Channel-to-channel isolation Accurate timings High CMTI (common mode rejection) > 150 V/ns < 2 µs fast UVLO start-up time Fast active clamping of the output for supply below UVLO Optional Dead-time control and shoot-through protection (DTC/STP) Benefits System safe isolation Simplified system safety approval Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments Perfect signal synchronization for increased system efficiency Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC) Enabling safe operation in bootstrapped system during start-up Protection against input overlap in case of noisy conditions as output short circuits Operation at higher bus voltages or in worst pollution degree environments Potential Applications Server, telecom, SMPS EV Off-board chargers Low-voltage drives and power tools Solar micro inverter, solar optimizer Industrial power supply (SMPS, Residential UPS) Applications 24 V EPS with active steering for commercial vehicles 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Light electric vehicles (LEV) Designers who used this product also designed with IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET ICE5QR2280BG | CoolSET™ Quasi Resonant BAS3010A-03W | Schottky Diodes IRLML2502TRPBF-1 | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET 1 2 3

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing.

The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs in high-power switching noise environment.

The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB8259F is available in a narrow-body 150 mil DSO-16 package.


Summary of Features

  • up to 3000 Vrma VISO robust input-to-output isolation meeting UL1577 components standard
  • Available system standards certificates (GB4943.1)
  • Channel-to-channel isolation
  • Accurate timings
  • High CMTI (common mode rejection) > 150 V/ns
  • < 2 µs fast UVLO start-up time
  • Fast active clamping of the output for supply below UVLO
  • Optional Dead-time control and shoot-through protection (DTC/STP)

Benefits

  • System safe isolation
  • Simplified system safety approval
  • Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments
  • Perfect signal synchronization for increased system efficiency
  • Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices
  • Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC)
  • Enabling safe operation in bootstrapped system during start-up
  • Protection against input overlap in case of noisy conditions as output short circuits
  • Operation at higher bus voltages or in worst pollution degree environments

Potential Applications

  • Server, telecom, SMPS
  • EV Off-board chargers
  • Low-voltage drives and power tools
  • Solar micro inverter, solar optimizer
  • Industrial power supply (SMPS, Residential UPS)

Applications

  • 24 V EPS with active steering for commercial vehicles
  • 48 V intermediate bus converter (IBC)
  • Cordless power tools and outdoor power equipment
  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • IRLML2502TRPBF-1 |
    N-Channel Power MOSFET
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R080P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMT65R022M1H |
    Silicon Carbide MOSFET Discretes
  • BSC520N15NS3 G |
    N-Channel Power MOSFET
  • ICE5QR2280BG |
    CoolSET™ Quasi Resonant
  • BAS3010A-03W |
    Schottky Diodes
  • IRLML2502TRPBF-1 |
    N-Channel Power MOSFET
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R080P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMT65R022M1H |
    Silicon Carbide MOSFET Discretes
  • BSC520N15NS3 G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDB8259F
Product Name Power - Gate Driver ICs - 2EDB8259F
Driver Type High-side; Low-side; Dual Gate Driver
Output Current 5 amps
Supply Voltage 3 to 17 volts
Propagation Delay 36 ns
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