Infineon Technologies AG Gate Driver ICs 2ED2304S06F

650 V Half Bridge Gate Driver IC with Integrated Bootstrap Diode (BSD) EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and MOSFETs with 0.36 A source and 0.7 A sink currents in DSO-8 package. Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied. Summary of Features Infineon thin-film-SOI-techno logy Fully operational to +650 V offset voltage Integrated ultra-fast, low RDSON bootstrap diode Output source/sink current capability +0.36 A/-0.7 A Tolerant to negative transient voltage up to -100 V (pulse width is up 300 ns) given by SOI-technology Gate drive supply range from 10 to 20 V Independent under-voltage lockout for both channels Short propagation delay and delay matching (60 ns, Maximum) Schmitt trigger inputs with hysteresis and pull down 3.3 V, 5 V and 15 V input logic compatible DSO-8, RoHS compliant package Benefits Integrated Bootstrap Diode for reduced BOM cost -100 V negative VS increased reliability / robustness 50% lower level shift losses leads lower temperature operation and higher reliability Latch-up immune increased reliability Flexible, small PCB footprint, & easy to use device with footprint compatibility to IRS2304 / IR2304 Applications Light electric vehicles (LEV) Motor Control Power conversion Power tools Smart induction cooktop – precise and efficient heating control Designers who used this product also designed with IPA80R360P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5ASAG | PWM-FF (fixed frequency) Flyback ICs IKD04N60RC2 | IGBT discretes IHW40N65R6 | IGBT discretes IPA80R360P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5ASAG | PWM-FF (fixed frequency) Flyback ICs IKD04N60RC2 | IGBT discretes IHW40N65R6 | IGBT discretes IPA80R360P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5ASAG | PWM-FF (fixed frequency) Flyback ICs IKD04N60RC2 | IGBT discretes IHW40N65R6 | IGBT discretes