Infineon Technologies AG Gate Driver ICs 2EDF7275K

Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275K is a functional isolated gate driver designed for high-performance DC-DC medium-voltage, half- and full-bridge topologies. The 4A/8A source/sink currents, combined with a 37ns short propagation delay and the highly accurate timing over both temperature and production, are the perfect fit for high-frequency PWM control with tightest possible dead time windows, delivering highest conversion efficiency. The very low impedance of the gate driver output stages keeps the driver package and PCB cooler, which is a key benefit in high density power brick converters. The device’s 4V UVLO and dead time control ensure that OptiMOS™ half-bridge MOSFETs always run within their safe operating area. A CMTI of 150V/ns guarantees high robustness even for fast switching transients (di/dt) in the power loop. The EiceDRIVER™ 2EDF7275K includes programmable DTC (dead time control) and an inverted SLDOP mode. All devices can operate in low cost bootstrapped high side supply and come in a cost competitive, small form factor LGA13 5mm x 5mm package. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output- to-output channel isolation Input-to-output channel isolation Benefits Efficiency gain and lower losses Improved thermal behavior at smaller form factor Protection and safe operation Flexible configurations Regulatory safety System values Enabling higher system efficiency and higher power density designs Improving cost position, integration and mass manufacturability Extending end-product lifetime by improving safe operation of power switches and reliable PWM communication and PWM signal chain in abnormal conditions Lowering EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin Source MOSFETs Meeting all isolation requirements of standard DC-DC equipment Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Multicopters and drones Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSC039N06NS | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC040N10NS5 | N-Channel Power MOSFET IPB039N10N3 G | N-Channel Power MOSFET BAS40-06 | Schottky Diodes BSC110N15NS5 | N-Channel Power MOSFET TDA38820 | Integrated POL Voltage Regulators BSC010N04LS6 | N-Channel Power MOSFET BSC009NE2LS5I | N-Channel Power MOSFET IPB108N15N3 G | N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275K is a functional isolated gate driver designed for high-performance DC-DC medium-voltage, half- and full-bridge topologies. The 4A/8A source/sink currents, combined with a 37ns short propagation delay and the highly accurate timing over both temperature and production, are the perfect fit for high-frequency PWM control with tightest possible dead time windows, delivering highest conversion efficiency. The very low impedance of the gate driver output stages keeps the driver package and PCB cooler, which is a key benefit in high density power brick converters. The device’s 4V UVLO and dead time control ensure that OptiMOS™ half-bridge MOSFETs always run within their safe operating area. A CMTI of 150V/ns guarantees high robustness even for fast switching transients (di/dt) in the power loop. The EiceDRIVER™ 2EDF7275K includes programmable DTC (dead time control) and an inverted SLDOP mode. All devices can operate in low cost bootstrapped high side supply and come in a cost competitive, small form factor LGA13 5mm x 5mm package. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output- to-output channel isolation Input-to-output channel isolation Benefits Efficiency gain and lower losses Improved thermal behavior at smaller form factor Protection and safe operation Flexible configurations Regulatory safety System values Enabling higher system efficiency and higher power density designs Improving cost position, integration and mass manufacturability Extending end-product lifetime by improving safe operation of power switches and reliable PWM communication and PWM signal chain in abnormal conditions Lowering EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin Source MOSFETs Meeting all isolation requirements of standard DC-DC equipment Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Multicopters and drones Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSC039N06NS | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC040N10NS5 | N-Channel Power MOSFET IPB039N10N3 G | N-Channel Power MOSFET BAS40-06 | Schottky Diodes BSC110N15NS5 | N-Channel Power MOSFET TDA38820 | Integrated POL Voltage Regulators BSC010N04LS6 | N-Channel Power MOSFET BSC009NE2LS5I | N-Channel Power MOSFET IPB108N15N3 G | N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 2EDF7275K - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2EDF7275K
Gate Driver ICs 2EDF7275K
Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275K is a functional isolated gate driver designed for high-performance DC-DC medium-voltage, half- and full-bridge topologies. The 4A/8A source/sink currents, combined with a 37ns short propagation delay and the highly accurate timing over both temperature and production, are the perfect fit for high-frequency PWM control with tightest possible dead time windows, delivering highest conversion efficiency. The very low impedance of the gate driver output stages keeps the driver package and PCB cooler, which is a key benefit in high density power brick converters. The device’s 4V UVLO and dead time control ensure that OptiMOS™ half-bridge MOSFETs always run within their safe operating area. A CMTI of 150V/ns guarantees high robustness even for fast switching transients (di/dt) in the power loop. The EiceDRIVER™ 2EDF7275K includes programmable DTC (dead time control) and an inverted SLDOP mode. All devices can operate in low cost bootstrapped high side supply and come in a cost competitive, small form factor LGA13 5mm x 5mm package. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output- to-output channel isolation Input-to-output channel isolation Benefits Efficiency gain and lower losses Improved thermal behavior at smaller form factor Protection and safe operation Flexible configurations Regulatory safety System values Enabling higher system efficiency and higher power density designs Improving cost position, integration and mass manufacturability Extending end-product lifetime by improving safe operation of power switches and reliable PWM communication and PWM signal chain in abnormal conditions Lowering EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin Source MOSFETs Meeting all isolation requirements of standard DC-DC equipment Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Multicopters and drones Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSC039N06NS | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC040N10NS5 | N-Channel Power MOSFET IPB039N10N3 G | N-Channel Power MOSFET BAS40-06 | Schottky Diodes BSC110N15NS5 | N-Channel Power MOSFET TDA38820 | Integrated POL Voltage Regulators BSC010N04LS6 | N-Channel Power MOSFET BSC009NE2LS5I | N-Channel Power MOSFET IPB108N15N3 G | N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPP030N10N5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers IPB072N15N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 1 2 3 4 5

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing

The EiceDRIVER™ 2EDF7275K is a functional isolated gate driver designed for high-performance DC-DC medium-voltage, half- and full-bridge topologies. The 4A/8A source/sink currents, combined with a 37ns short propagation delay and the highly accurate timing over both temperature and production, are the perfect fit for high-frequency PWM control with tightest possible dead time windows, delivering highest conversion efficiency.

The very low impedance of the gate driver output stages keeps the driver package and PCB cooler, which is a key benefit in high density power brick converters. The device’s 4V UVLO and dead time control ensure that OptiMOS™ half-bridge MOSFETs always run within their safe operating area. A CMTI of 150V/ns guarantees high robustness even for fast switching transients (di/dt) in the power loop. The EiceDRIVER™ 2EDF7275K includes programmable DTC (dead time control) and an inverted SLDOP mode. All devices can operate in low cost bootstrapped high side supply and come in a cost competitive, small form factor LGA13 5mm x 5mm package.


Summary of Features

  • Fast power switching with accurate timing
  • Optimized for area and low cost system BOM
  • Robust design against switching noise
  • Output- to-output channel isolation
  • Input-to-output channel isolation

Benefits

  • Efficiency gain and lower losses
  • Improved thermal behavior at smaller form factor
  • Protection and safe operation
  • Flexible configurations
  • Regulatory safety

System values

  • Enabling higher system efficiency and higher power density designs
  • Improving cost position, integration and mass manufacturability
  • Extending end-product lifetime by improving safe operation of power switches and reliable PWM communication and PWM signal chain in abnormal conditions
  • Lowering EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin Source MOSFETs
  • Meeting all isolation requirements of standard DC-DC equipment

Potential Applications

  • Telecom DC-DC
  • Server
  • Industrial SMPS
  • UPS
  • Battery
  • EV-Charging

Applications

  • 48 V intermediate bus converter (IBC)
  • 48 V to 12 V DC-DC converter
  • Multicopters and drones
  • Solutions for inductive wireless charging above 50 W
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • IPP030N10N5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • BSC039N06NS |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • IPB039N10N3 G |
    N-Channel Power MOSFET
  • BAS40-06 |
    Schottky Diodes
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • TDA38820 |
    Integrated POL Voltage Regulators
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • BSC009NE2LS5I |
    N-Channel Power MOSFET
  • IPB108N15N3 G |
    N-Channel Power MOSFET
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • IPP030N10N5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDF7275K
Product Name Gate Driver ICs
Driver Type High-side; Low-side; Dual Gate Driver
Output Current 4 amps
Supply Voltage 20 volts
Propagation Delay 37 ns
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