The 2ED2109 (4) S06F (J) is a high voltage, high-speed half-bridge gate driver designed for driving power MOSFETs and IGBTs. It operates with a maximum supply voltage of 25 V and can handle operating voltages up to 650 V, making it suitable for various power electronic applications. The device features an integrated bootstrap diode and is capable of maintaining operational logic at negative voltages down to -11 V on the VS pin. The driver includes independent high and low side output channels, with a typical internal dead time of 540 ns, which can be programmed up to 5 µs in certain versions. It supports input logic levels of 3.3 V, 5 V, and 15 V, and has negative voltage tolerance on inputs of -5 V. The product is RoHS compliant and qualified for industrial applications according to JEDEC standards. Typical applications include motor drives, inverters, and electric vehicle charging stations. The 2ED2109 (4) S06F (J) is available in DSO-8 and DSO-14 package options, with a standard pack quantity of 2500 units.
Win Source Part Number: 1372563-2ED2109S06FX
Category: Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Temperature Range - Operating: -40°C ~ 125°C (TA)
Fake Threat In the Open Market: 40 pct.
MSL Level: 2 (1 Year)
Mfr: Infineon Technologies
Package: Tape & Reel
Product Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-53
Base Product Number: 2ED2109
Mounting Type: Surface Mount
HTSUS: 8542.39.0001
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 10V ~ 20V
Rise / Fall Time (Typ): 100ns, 35ns
Input Type: Non-Inverting
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
High Side Voltage - Max (Bootstrap): 650 V
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
IC HALF BRIDGE GATE DRIVER 650V Product overview: 2ED2109S06FXUMA1 from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, 650V, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-2ED2109S06FXUMA1
IC HALF BRIDGE GATE DRIVER 650V
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
MOSFET DRIVER, -40 TO 125DEG C ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers |
| Product Number | 1372563-2ED2109S06FXUMA1 | 448-2ED2109S06FXUMA1TR-ND | 730-2ED2109S06FXUMA1 | 2ED2109S06FXUMA1 | 2ED2109S06FXUMA1 | 50AH0214 |
| Product Name | Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers | Gate Drivers | 650V Gate Driver IC | Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers | Gate Drivers | Mosfet Driver, -40 To 125Deg C Rohs Compliant Infineon |
| Driver Type | Dual Gate Driver | Dual Gate Driver | Dual Gate Driver; Half-Bridge | Dual Gate Driver | ||
| Output Configuration | Noninverting | Noninverting | Noninverting; Non-Inverting | Inverting; Noninverting | ||
| Output Current | 0.7000 amps | 0.7000 amps | 0.7000 amps | 0.7000 amps | ||
| Supply Voltage | 10 to 20 volts | 10 to 20 volts | 10 to 20 volts | 20 to 10 volts | 10 to 20 volts | |
| Rise Time | 100 ns | 100 ns | 100 ns | 100 ns |
