Infineon Technologies AG Gate Driver ICs 2ED21064S06J

Description
650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package 650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation High and low voltage pins separated for maximum creepage and clearance Separate logic and power ground, shorten the gate loop Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN logic input Maximum supply voltage of 25 V Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Battery formation Consumer electronics EV charging LED lighting system designs Motor Control Find our Variations for 2ED21064S06J Part No Package Input logic Interlock Deadtime 2ED2106S06F DSO - 8 HIN, LIN No None 2ED2108S06F DSO - 8 HIN, /LIN Yes Internal 540 ns 2ED21084S06J DSO - 14 HIN, /LIN Yes Programmable 540 ns - 5000 ns 2ED2109S06F DSO - 8 IN, /SD Yes Internal 540 ns 2ED21094S06J DSO - 14 IN, /SD Yes Programmable 540 ns - 5000 ns 2ED21091S06F DSO - 8 IN, DT/SD Yes Programmable 540 ns - 2700 ns Part No Package Input logic Interlock Deadtime
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Description
650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package 650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation High and low voltage pins separated for maximum creepage and clearance Separate logic and power ground, shorten the gate loop Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN logic input Maximum supply voltage of 25 V Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Battery formation Consumer electronics EV charging LED lighting system designs Motor Control Find our Variations for 2ED21064S06J Part No Package Input logic Interlock Deadtime 2ED2106S06F DSO - 8 HIN, LIN No None 2ED2108S06F DSO - 8 HIN, /LIN Yes Internal 540 ns 2ED21084S06J DSO - 14 HIN, /LIN Yes Programmable 540 ns - 5000 ns 2ED2109S06F DSO - 8 IN, /SD Yes Internal 540 ns 2ED21094S06J DSO - 14 IN, /SD Yes Programmable 540 ns - 5000 ns 2ED21091S06F DSO - 8 IN, DT/SD Yes Programmable 540 ns - 2700 ns Part No Package Input logic Interlock Deadtime
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Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 2ED21064S06J - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2ED21064S06J
Gate Driver ICs 2ED21064S06J
650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package 650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation High and low voltage pins separated for maximum creepage and clearance Separate logic and power ground, shorten the gate loop Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN logic input Maximum supply voltage of 25 V Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Battery formation Consumer electronics EV charging LED lighting system designs Motor Control Find our Variations for 2ED21064S06J Part No Package Input logic Interlock Deadtime 2ED2106S06F DSO - 8 HIN, LIN No None 2ED2108S06F DSO - 8 HIN, /LIN Yes Internal 540 ns 2ED21084S06J DSO - 14 HIN, /LIN Yes Programmable 540 ns - 5000 ns 2ED2109S06F DSO - 8 IN, /SD Yes Internal 540 ns 2ED21094S06J DSO - 14 IN, /SD Yes Programmable 540 ns - 5000 ns 2ED21091S06F DSO - 8 IN, DT/SD Yes Programmable 540 ns - 2700 ns Part No Package Input logic Interlock Deadtime

650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package

650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.


Summary of Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • Floating channel designed for bootstrap operation
  • High and low voltage pins separated for maximum creepage and clearance
  • Separate logic and power ground, shorten the gate loop
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • HIN, LIN logic input
  • Maximum supply voltage of 25 V
  • Logic operational up to –11 V on VS Pin
  • Negative voltage tolerance on inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Benefits

  • Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin

Applications

  • Battery formation
  • Consumer electronics
  • EV charging
  • LED lighting system designs
  • Motor Control

Find our Variations for 2ED21064S06J

Part No Package Input logic Interlock Deadtime

2ED2106S06F

DSO - 8

HIN, LIN

No None

2ED2108S06F

DSO - 8 HIN, /LIN

Yes

Internal 540 ns

2ED21084S06J

DSO - 14 HIN, /LIN

Yes

Programmable 540 ns - 5000 ns

2ED2109S06F

DSO - 8 IN, /SD

Yes

Internal 540 ns

2ED21094S06J

DSO - 14 IN, /SD

Yes

Programmable 540 ns - 5000 ns

2ED21091S06F

DSO - 8

IN, DT/SD

Yes

Programmable 540 ns - 2700 ns


Part No Package Input logic Interlock Deadtime

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED21064S06J
Product Name Gate Driver ICs
Driver Type High-side; Low-side
Output Current 0.2900 amps
Supply Voltage 10 to 20 volts
Propagation Delay 200 ns
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