EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G
The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.
This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.
All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.
Summary of Features
No need for external boot strap diode
Fast MOSFET switching
Strong pull-down current reduces risk of
return-on from switching noise
Low dead-time losses
Inherent shoot-through protection
-8 V/+15 V common mode rejection
Benefits
High power density
High efficiency
Strong MOSFET Reliability
High efficiency
Strong MOSFET reliability
Robust operation
Potential Applications
Telecom DC-DC converter
Datacom DC-DC converter
Two switch forward converter
Active clamp forward converter
Class D audio amplifier
Applications
48 V intermediate bus converter (IBC)
Data center and AI data center solutions
Domestic robots
Integrated and discrete solutions for Personal Care products
Power conversion
Designers who used this product also designed with
BSZ110N08NS5 | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC047N08NS3 G | N-Channel Power MOSFET
BSC065N06LS5 | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
1EDI20N12AF | Gate driver ICs
IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSO220N03MD G | N-Channel Power MOSFET
IDH20G65C5 | CoolSiC™ Schottky Diodes
IPP60R180CM8 | 600 V CoolMOS™ 8
IDH06G65C5 | CoolSiC™ Schottky Diodes
BSC040N10NS5 | N-Channel Power MOSFET
BSZ070N08LS5 | N-Channel Power MOSFET
BAS70-05W | Schottky Diodes
BSC026N08NS5 | N-Channel Power MOSFET
IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSZ110N08NS5 | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC047N08NS3 G | N-Channel Power MOSFET
BSC065N06LS5 | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
1EDI20N12AF | Gate driver ICs
IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G
The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.
This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.
All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.
Summary of Features
- No need for external boot strap diode
- Fast MOSFET switching
- Strong pull-down current reduces risk of
- return-on from switching noise
- Low dead-time losses
- Inherent shoot-through protection
- -8 V/+15 V common mode rejection
Benefits
- High power density
- High efficiency
- Strong MOSFET Reliability
- High efficiency
- Strong MOSFET reliability
- Robust operation
Potential Applications
- Telecom DC-DC converter
- Datacom DC-DC converter
- Two switch forward converter
- Active clamp forward converter
- Class D audio amplifier
Applications
- 48 V intermediate bus converter (IBC)
- Data center and AI data center solutions
- Domestic robots
- Integrated and discrete solutions for Personal Care products
- Power conversion
Designers who used this product also designed with
- BSZ110N08NS5 |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC047N08NS3 G |
N-Channel Power MOSFET
- BSC065N06LS5 |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- IPD70R360P7S |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPZ60R040C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL60R104C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSO220N03MD G |
N-Channel Power MOSFET
- IDH20G65C5 |
CoolSiC™ Schottky Diodes
- IPP60R180CM8 |
600 V CoolMOS™ 8
- IDH06G65C5 |
CoolSiC™ Schottky Diodes
- BSC040N10NS5 |
N-Channel Power MOSFET
- BSZ070N08LS5 |
N-Channel Power MOSFET
- BAS70-05W |
Schottky Diodes
- BSC026N08NS5 |
N-Channel Power MOSFET
- IPL60R105P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSZ110N08NS5 |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC047N08NS3 G |
N-Channel Power MOSFET
- BSC065N06LS5 |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- IPD70R360P7S |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPZ60R040C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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