Infineon Technologies AG Gate Driver ICs 1EDN8550B

Description
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN8550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 8V UVLO version SOT-23 package, 6 pins Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) Cordless vacuum cleaners DIN rail power supplies Light electric vehicles (LEV) Washing and drying Designers who used this product also designed with ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) IKCM15L60GD | Intelligent Power Modules (IPM) CY8C4146AZI-S423T | PSOC™ 4 Arm® Cortex®-M0/M0+ SPD30P06P G | P-Channel Power MOSFET IPT007N06N | N-Channel Power MOSFET IMZ120R220M1H | Silicon Carbide MOSFET Discretes IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) 1 2 3 4 5
Request a Quote Datasheet
Description
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN8550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 8V UVLO version SOT-23 package, 6 pins Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) Cordless vacuum cleaners DIN rail power supplies Light electric vehicles (LEV) Washing and drying Designers who used this product also designed with ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) IKCM15L60GD | Intelligent Power Modules (IPM) CY8C4146AZI-S423T | PSOC™ 4 Arm® Cortex®-M0/M0+ SPD30P06P G | P-Channel Power MOSFET IPT007N06N | N-Channel Power MOSFET IMZ120R220M1H | Silicon Carbide MOSFET Discretes IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 1EDN8550B - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
1EDN8550B
Gate Driver ICs 1EDN8550B
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN8550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 8V UVLO version SOT-23 package, 6 pins Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) Cordless vacuum cleaners DIN rail power supplies Light electric vehicles (LEV) Washing and drying Designers who used this product also designed with ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) IKCM15L60GD | Intelligent Power Modules (IPM) CY8C4146AZI-S423T | PSOC™ 4 Arm® Cortex®-M0/M0+ SPD30P06P G | P-Channel Power MOSFET IPT007N06N | N-Channel Power MOSFET IMZ120R220M1H | Silicon Carbide MOSFET Discretes IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs IPL60R160CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IAUC60N10S5L110 | Automotive MOSFET IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IDW12G65C5 | CoolSiC™ Schottky Diodes IKCM10H60GA | Intelligent Power Modules (IPM) 1 2 3 4 5

1-channel non-isolated gate-driver IC family with truly differential inputs

The 1EDN8550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in:

  • Boost-PFC with Kelvin-source MOSFETs
  • Synchronous rectification stages
  • Designs with long distance between control IC and gate-driver IC
  • Buck-boost converters
  • Low- and medium-voltage half-bridges
  • High density 48V to 12V intermediate bus converter

Summary of Features

  • Truly differential inputs
  • 4A source current
  • 8A sink current
  • Separate source/sink outputs
  • Low-ohmic output stage
  • 29ns input minimum pulse width
  • -7 ns/+10 ns propagation delay accuracy
  • 5A reverse current robustness of the outputs
  • 8V UVLO version
  • SOT-23 package, 6 pins

Benefits

  • Robust
  • Small
  • PCB layout flexibility
  • High power density
  • Short time to market

Potential applications

  • Boost-PFCs with Kelvin-source MOSFETs
  • Interleaved PFC
  • Full-bridge synchronous rectification stages
  • 48V to 12V intermediate bus converters
  • Buck-boost converters
  • Low- and medium-voltage half-bridges

Application benefits

  • Robust against ground shifts from power MOSFET switching
  • Low MOSFET switching losses
  • Robust against false MOSFET triggering
  • Highest effective MOSFET driving power
  • Efficiency gains
  • Increased power density and BOM savings
  • Instant MOSFET protection under abnormal operation
  • High power density

Applications

  • 48 V intermediate bus converter (IBC)
  • Cordless vacuum cleaners
  • DIN rail power supplies
  • Light electric vehicles (LEV)
  • Washing and drying

Designers who used this product also designed with


  • ICE5QSBG |
    PWM-QR (quasi resonant) Flyback ICs
  • IPL60R160CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IAUC60N10S5L110 |
    Automotive MOSFET
  • IPW60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IDW12G65C5 |
    CoolSiC™ Schottky Diodes
  • IKCM10H60GA |
    Intelligent Power Modules (IPM)
  • IKCM15L60GD |
    Intelligent Power Modules (IPM)
  • CY8C4146AZI-S423T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • SPD30P06P G |
    P-Channel Power MOSFET
  • IPT007N06N |
    N-Channel Power MOSFET
  • IMZ120R220M1H |
    Silicon Carbide MOSFET Discretes
  • IPN95R1K2P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • IPN95R3K7P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R285P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD95R1K2P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE5QSBG |
    PWM-QR (quasi resonant) Flyback ICs
  • IPL60R160CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IAUC60N10S5L110 |
    Automotive MOSFET
  • IPW60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IDW12G65C5 |
    CoolSiC™ Schottky Diodes
  • IKCM10H60GA |
    Intelligent Power Modules (IPM)

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Supplier's Site Datasheet
Integrated Circuits (ICs) - PMIC - Gate Drivers - 1253520-1EDN8550B - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - PMIC - Gate Drivers
1253520-1EDN8550B
Integrated Circuits (ICs) - PMIC - Gate Drivers 1253520-1EDN8550B
Win Source Part Number: 1253520-1EDN8550B Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Series: * Package: Bulk Standard Package: 1 ECCN: EAR99 Fake Threat In the Open Market: 60 pct. HTSUS: 8542.39.0001 Mfr: Infineon Technologies Other Names: 2156-1EDN8550B,INFIN F1EDN8550B

Win Source Part Number: 1253520-1EDN8550B
Category: Integrated Circuits (ICs)>PMIC - Gate Drivers
Series: *
Package: Bulk
Standard Package: 1
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
HTSUS: 8542.39.0001
Mfr: Infineon Technologies
Other Names: 2156-1EDN8550B,INFINF1EDN8550B

Buy Now Datasheet
Gate Driver IC - 730-1EDN8550B - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Gate Driver IC
730-1EDN8550B
Gate Driver IC 730-1EDN8550B
1EDN8550 - GATE DRIVER Product overview: 1EDN8550B from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-1EDN8550B can be used for catalog matching and distributor lookup.

1EDN8550 - GATE DRIVER Product overview: 1EDN8550B from Infineon Technologies is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-1EDN8550B can be used for catalog matching and distributor lookup.

Supplier's Site
Gate Drivers - 1EDN8550B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
1EDN8550B
Gate Drivers 1EDN8550B
High-Side or Low-Side Gate Driver IC Non-Inverting PG-SOT23-6

High-Side or Low-Side Gate Driver IC Non-Inverting PG-SOT23-6

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd.
Product Category Gate Drivers Gate Drivers Gate Drivers Gate Drivers
Product Number 1EDN8550B 1253520-1EDN8550B 730-1EDN8550B 1EDN8550B
Product Name Gate Driver ICs Integrated Circuits (ICs) - PMIC - Gate Drivers Gate Driver IC Gate Drivers
Driver Type High-side; Low-side High-Side or Low-Side High-side; Low-side
Output Current 4 amps 8 amps 8 amps
Supply Voltage 8 to 20 volts 4.5 to 20 volts
Propagation Delay 45 ns
Package Type PG-SOT23-6 Bulk SOT-23-6
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