650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
Operating voltages (VS node) upto + 650 V
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creepage and Clearance
Separate logic and power ground
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (programmable deadtime)
Maximum supply voltage of 25 V
Independent under voltage lockout (UVLO) for both channels
200 ns propagation delay
HIN, LIN input logic
Logic Operational up to –11 V on VS Pin
Negative Voltage Tolerance On Inputs of –5 V
The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
50% lower level-shift losses
Excellent ruggedness and noise immunity against negative transient voltages on VS pin
Applications
Home appliances
Motor Control
Power conversion
Power tools
Smart induction cooktop – precise and efficient heating control
Find our Variations for 2ED21824S06J
Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No
None
2ED2182S06F
DSO - 8 HIN, LIN
Yes
Internal 400 ns
2ED2183S06F DSO - 8 HIN, /LIN
Yes
Internal 400 ns
2ED21834S06J DSO – 14 HIN, /LIN
Yes
Programmable 400 ns - 5000 ns
2ED2184S06F DSO - 8 IN, /SD
Yes
Internal 400 ns
2ED21844S06J DSO – 14
IN, /SD
Yes
Programmable 400 ns - 5000 ns
Part No Package Input logic Interlock Deadtime
Designers who used this product also designed with
IHW50N65R5 | IGBT discretes
ICE5QR1680BG | CoolSET™ Quasi Resonant
CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+
CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+
IHW50N65R5 | IGBT discretes
ICE5QR1680BG | CoolSET™ Quasi Resonant
CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+
CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+
IHW50N65R5 | IGBT discretes
ICE5QR1680BG | CoolSET™ Quasi Resonant
CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+
CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- High and Low Voltage Pins Separated for Maximum Creepage and Clearance
- Separate logic and power ground
- Floating channel designed for bootstrap operation
- Integrated shoot-through protection with built-in dead time (programmable deadtime)
- Maximum supply voltage of 25 V
- Independent under voltage lockout (UVLO) for both channels
- 200 ns propagation delay
- HIN, LIN input logic
- Logic Operational up to –11 V on VS Pin
- Negative Voltage Tolerance On Inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages on VS pin
Applications
- Home appliances
- Motor Control
- Power conversion
- Power tools
- Smart induction cooktop – precise and efficient heating control
Find our Variations for 2ED21824S06J
Part No Package Input logic Interlock Deadtime
2ED2181S06F DSO - 8 HIN, LIN No None
2ED21814S06J DSO - 14 HIN, LIN No
None
2ED2182S06F
DSO - 8 HIN, LIN
Yes
Internal 400 ns
2ED2183S06F DSO - 8 HIN, /LIN
Yes
Internal 400 ns
2ED21834S06J DSO – 14 HIN, /LIN
Yes
Programmable 400 ns - 5000 ns
2ED2184S06F DSO - 8 IN, /SD
Yes
Internal 400 ns
2ED21844S06J DSO – 14
IN, /SD
Yes
Programmable 400 ns - 5000 ns
Part No Package Input logic Interlock Deadtime
Designers who used this product also designed with
- IHW50N65R5 |
IGBT discretes
- ICE5QR1680BG |
CoolSET™ Quasi Resonant
- CY8C4025LQI-S411T |
PSOC™ 4 Arm® Cortex®-M0/M0+
- CY8C4025LQI-S412T |
PSOC™ 4 Arm® Cortex®-M0/M0+
- IHW50N65R5 |
IGBT discretes
- ICE5QR1680BG |
CoolSET™ Quasi Resonant
- CY8C4025LQI-S411T |
PSOC™ 4 Arm® Cortex®-M0/M0+
- CY8C4025LQI-S412T |
PSOC™ 4 Arm® Cortex®-M0/M0+
- IHW50N65R5 |
IGBT discretes
- ICE5QR1680BG |
CoolSET™ Quasi Resonant
- CY8C4025LQI-S411T |
PSOC™ 4 Arm® Cortex®-M0/M0+
- CY8C4025LQI-S412T |
PSOC™ 4 Arm® Cortex®-M0/M0+