Infineon Technologies AG Gate Driver ICs 2ED21824S06J

Description
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for Maximum Creepage and Clearance Separate logic and power ground Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (programmable deadtime) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Home appliances Motor Control Power conversion Power tools Smart induction cooktop – precise and efficient heating control Find our Variations for 2ED21824S06J Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+
Request a Quote Datasheet
Description
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for Maximum Creepage and Clearance Separate logic and power ground Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (programmable deadtime) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Home appliances Motor Control Power conversion Power tools Smart induction cooktop – precise and efficient heating control Find our Variations for 2ED21824S06J Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+
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Suppliers

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Product
Description
Supplier Links
Gate Driver ICs - 2ED21824S06J - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2ED21824S06J
Gate Driver ICs 2ED21824S06J
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for Maximum Creepage and Clearance Separate logic and power ground Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (programmable deadtime) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Home appliances Motor Control Power conversion Power tools Smart induction cooktop – precise and efficient heating control Find our Variations for 2ED21824S06J Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+ IHW50N65R5 | IGBT discretes ICE5QR1680BG | CoolSET™ Quasi Resonant CY8C4025LQI-S411T | PSOC™ 4 Arm® Cortex®-M0/M0+ CY8C4025LQI-S412T | PSOC™ 4 Arm® Cortex®-M0/M0+

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package

650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.


Summary of Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • High and Low Voltage Pins Separated for Maximum Creepage and Clearance
  • Separate logic and power ground
  • Floating channel designed for bootstrap operation
  • Integrated shoot-through protection with built-in dead time (programmable deadtime)
  • Maximum supply voltage of 25 V
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • HIN, LIN input logic
  • Logic Operational up to –11 V on VS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Benefits

  • Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages on VS pin

Applications

  • Home appliances
  • Motor Control
  • Power conversion
  • Power tools
  • Smart induction cooktop – precise and efficient heating control

Find our Variations for 2ED21824S06J

Part No Package Input logic Interlock Deadtime
2ED2181S06F DSO - 8 HIN, LIN No None
2ED21814S06J DSO - 14 HIN, LIN No

None

2ED2182S06F

DSO - 8 HIN, LIN

Yes

Internal 400 ns


2ED2183S06F DSO - 8 HIN, /LIN

Yes

Internal 400 ns


2ED21834S06J DSO – 14 HIN, /LIN

Yes

Programmable 400 ns - 5000 ns


2ED2184S06F DSO - 8 IN, /SD

Yes

Internal 400 ns


2ED21844S06J DSO – 14

IN, /SD

Yes

Programmable 400 ns - 5000 ns


Part No Package Input logic Interlock Deadtime

Designers who used this product also designed with


  • IHW50N65R5 |
    IGBT discretes
  • ICE5QR1680BG |
    CoolSET™ Quasi Resonant
  • CY8C4025LQI-S411T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • CY8C4025LQI-S412T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • IHW50N65R5 |
    IGBT discretes
  • ICE5QR1680BG |
    CoolSET™ Quasi Resonant
  • CY8C4025LQI-S411T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • CY8C4025LQI-S412T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • IHW50N65R5 |
    IGBT discretes
  • ICE5QR1680BG |
    CoolSET™ Quasi Resonant
  • CY8C4025LQI-S411T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • CY8C4025LQI-S412T |
    PSOC™ 4 Arm® Cortex®-M0/M0+
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED21824S06J
Product Name Gate Driver ICs
Driver Type High-side; Low-side
Output Current 2.5 amps
Supply Voltage 10 to 20 volts
Propagation Delay 200 ns
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