EiceDRIVERTM 650 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs.
Summary of Features
Infineon thin-film-SOI-techno
logy
Maximum blocking voltage +650 V
Output current +0.165 A/-0.375 A
Integrated Bootstrap Diode
Neg. Vs immunity up to -50 V
Over current & under voltage detection
Programmable delay for fault clear time
Cross-conduction prevention
Benefits
Smallest footprint package solution
Higher efficiency
Increased reliability
Higher breakdown voltage (650 V)
Easy of design
Applications
Home appliances
Residential heat pumps
EiceDRIVERTM 650 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs.
Summary of Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output current +0.165 A/-0.375 A
- Integrated Bootstrap Diode
- Neg. Vs immunity up to -50 V
- Over current & under voltage detection
- Programmable delay for fault clear time
- Cross-conduction prevention
Benefits
- Smallest footprint package solution
- Higher efficiency
- Increased reliability
- Higher breakdown voltage (650 V)
- Easy of design
Applications
- Home appliances
- Residential heat pumps
