Infineon Technologies AG Power - Gate Driver ICs - 2EDF5215G 2EDF5215G

Description
Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving. Summary of Features 250 V high and low-side gate driver -250 V negative HS transient immunity 100 V/ns dV/dt robustness 5 A / 9 A source / sink capability +9 ns /-5 ns delay accuracy 4 ns max delay matching 1.2 V output clamping threshold in UVLO <2 μs fast start-up time Benefits High-side channel isolation Flexible: Independent channels robustness against ground noise Great signal synchronization Reliable for high switching frequencies Safe operation during system start-up Optimal operation in bootstrap supply Potential Applications Solar optimizers and micro-inverters Server and telecom DC-DC converter Synchronous rectification for SMPS Motor drives and power tools Low-speed electric vehicles (LSEV)
Request a Quote Datasheet
Description
Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving. Summary of Features 250 V high and low-side gate driver -250 V negative HS transient immunity 100 V/ns dV/dt robustness 5 A / 9 A source / sink capability +9 ns /-5 ns delay accuracy 4 ns max delay matching 1.2 V output clamping threshold in UVLO <2 μs fast start-up time Benefits High-side channel isolation Flexible: Independent channels robustness against ground noise Great signal synchronization Reliable for high switching frequencies Safe operation during system start-up Optimal operation in bootstrap supply Potential Applications Solar optimizers and micro-inverters Server and telecom DC-DC converter Synchronous rectification for SMPS Motor drives and power tools Low-speed electric vehicles (LSEV)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDF5215G - 2EDF5215G - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDF5215G
2EDF5215G
Power - Gate Driver ICs - 2EDF5215G 2EDF5215G
Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving. Summary of Features 250 V high and low-side gate driver -250 V negative HS transient immunity 100 V/ns dV/dt robustness 5 A / 9 A source / sink capability +9 ns /-5 ns delay accuracy 4 ns max delay matching 1.2 V output clamping threshold in UVLO <2 μs fast start-up time Benefits High-side channel isolation Flexible: Independent channels robustness against ground noise Great signal synchronization Reliable for high switching frequencies Safe operation during system start-up Optimal operation in bootstrap supply Potential Applications Solar optimizers and micro-inverters Server and telecom DC-DC converter Synchronous rectification for SMPS Motor drives and power tools Low-speed electric vehicles (LSEV)

Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.


Summary of Features

  • 250 V high and low-side gate driver
  • -250 V negative HS transient immunity
  • 100 V/ns dV/dt robustness
  • 5 A / 9 A source / sink capability
  • +9 ns /-5 ns delay accuracy
  • 4 ns max delay matching
  • 1.2 V output clamping threshold in UVLO
  • <2 μs fast start-up time

Benefits

  • High-side channel isolation
  • Flexible: Independent channels
  • robustness against ground noise
  • Great signal synchronization
  • Reliable for high switching frequencies
  • Safe operation during system start-up
  • Optimal operation in bootstrap supply

Potential Applications

  • Solar optimizers and micro-inverters
  • Server and telecom DC-DC converter
  • Synchronous rectification for SMPS
  • Motor drives and power tools
  • Low-speed electric vehicles (LSEV)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDF5215G
Product Name Power - Gate Driver ICs - 2EDF5215G
Driver Type High-side; Low-side; Dual Gate Driver
Unlock Full Specs
to access all available technical data

Similar Products

Gate Driver ICs - 2EDN7534G - Infineon Technologies AG
Infineon Technologies AG
Specs
Driver Type Low-side
Output Current 5 amps
Supply Voltage 4.2 to 20 volts
View Details
Gate Drivers - 448-2EDL8034F5BXUMA1DKR-ND - DigiKey
Infineon Technologies AG
Specs
Driver Type Dual Gate Driver
Output Configuration Noninverting
Output Current 4 amps
View Details
Gate Driver ICs - 1EDI3020AS - Infineon Technologies AG
Infineon Technologies AG
Specs
Driver Type High-side
Output Current 20 amps
Supply Voltage 3 to 5.5 volts
View Details
Power - Gate Driver ICs - 1ED3330MC12M - 1ED3330MC12M - Infineon Technologies AG
Specs
Driver Type High-side
Output Current 12 amps
Supply Voltage 3 to 5.5 volts
View Details