Infineon Technologies AG Gate Driver ICs 2EDS8265H

Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDS8265H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier in SMPS. The strong 4A/8A source/sink dual-channel gate driver comes with a very high 150V/ns CMTI (Common Mode Transient Immunity) for robust operation with fast CoolMOS™ and high power switching noise environment. The very short propagation delay of 37ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. The 2EDS8265H with 1A/2A is available for smaller MOSFETs or PWM signal/data decoupling for very high power designs working with local boost drivers. Safety certificates in accordance with UL1577, VDE0884-10, and IEC62368 are available. The 2EDS8265H comes in a wide-body 300mil DSO-16 package. Summary of Features Fast switching with accurate timing Optimized for area and system BOM Robust against switching noise Output- to-output channel isolation Input-to-output channel isolation Benefits Efficiency gain and lower losses Improved thermal behavior at smaller form factor Protection and safe operation Flexible configurations Regulatory safety System values Enabling higher system efficiency and higher power density designs Improving long term competitive cost position, integration and mass manufacturability Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions Lower EMI by ground isolation, driver proximity to MOSFETs or when using 4-pin Kelvin source MOSFETs Simplified safety approval through component (VDE884-x, UL1577 and system (IEC60950, IEC62368) certificates Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Smart Grid Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Energy Storage Systems EV charging Telecommunication infrastructure Designers who used this product also designed with IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IQE006NE2LM5 | N-Channel Power MOSFET IPB107N20N3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IDH12G65C6 | CoolSiC™ Schottky Diodes BSC040N10NS5 | N-Channel Power MOSFET IDL06G65C5 | CoolSiC™ Schottky Diodes IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BAS70-05W | Schottky Diodes IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IQE006NE2LM5 | N-Channel Power MOSFET IPB107N20N3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4