Infineon Technologies AG Gate Driver ICs 2ED2104S06F

650 V half-bridge gate driver with integrated bootstrap diode 650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, the 2ED2104S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions. Summary of Features Operating voltages (VS node) up to + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode 90 ns propagation delay Cross-conduction prevention logic Internal 520 ns dead time IN, /SD logic input Floating channel designed for bootstrap operation Independent under voltage lockout (UVLO) for both channels Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V Maximum supply voltage of 25 V 3.3 V, 5 V and 15 V input logic compatible Benefits Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications LED lighting system designs Power conversion Robotics Smart buildings 2ED2104 family variations Part No Package Imput logic Interlock Deadtime 2ED2104S06F DSO-8 IN, /SD Yes Internal 520 ns 2ED2103S06F DSO-8 HIN, /LIN Yes Internal 520 ns 2ED2101S06F DSO-8 HIN, LIN No None Part No Package Imput logic Interlock Deadtime