Infineon Technologies AG Power - Gate Driver ICs - 2EDL8033G3C 2EDL8033G3C

Description
120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply. The 2EDL8033G3C is available in SON-10 pins 3 mm x 3 mm package. Summary of Features 3 A & 4 A source / 6 A sink output current capability 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability for increased robustness -5 A output pin reverse current capability -12 V absolute maximum negative voltage on HS 8 V to 17 V supply voltage operating range UVLO for both high-side and low-side driver Fast propagation delay (< 35 ns) 2 ns typical delay matching Enable / disable functionality in SON-10 (3 x 3) package Offered in SON-10 (3x3) package Specified from -40ºC to 125ºC operating junction temperature range Benefits Best in class driving capability with 3 A & 4 A source / 6 A sink output current capability Helps in achieving better efficiency due to its strong source/ sink capability Strong 6 A pull down for avoiding induced turn on Tight propagation delay matching reduces dead time losses Offered in small 3 x 3 mm leadless package with industry standard pin-out Integrated bootstrap diode reduces BOM cost and increases power density Potential Applications Telecom/Datacom half- and full- bridge power converters Current-fed push-pull converters Buck converters Two-switch forward converters Active clamp forward converters Class D amplifiers DC motor drives Designers who used this product also designed with IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
Request a Quote Datasheet
Description
120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply. The 2EDL8033G3C is available in SON-10 pins 3 mm x 3 mm package. Summary of Features 3 A & 4 A source / 6 A sink output current capability 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability for increased robustness -5 A output pin reverse current capability -12 V absolute maximum negative voltage on HS 8 V to 17 V supply voltage operating range UVLO for both high-side and low-side driver Fast propagation delay (< 35 ns) 2 ns typical delay matching Enable / disable functionality in SON-10 (3 x 3) package Offered in SON-10 (3x3) package Specified from -40ºC to 125ºC operating junction temperature range Benefits Best in class driving capability with 3 A & 4 A source / 6 A sink output current capability Helps in achieving better efficiency due to its strong source/ sink capability Strong 6 A pull down for avoiding induced turn on Tight propagation delay matching reduces dead time losses Offered in small 3 x 3 mm leadless package with industry standard pin-out Integrated bootstrap diode reduces BOM cost and increases power density Potential Applications Telecom/Datacom half- and full- bridge power converters Current-fed push-pull converters Buck converters Two-switch forward converters Active clamp forward converters Class D amplifiers DC motor drives Designers who used this product also designed with IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDL8033G3C - 2EDL8033G3C - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL8033G3C
2EDL8033G3C
Power - Gate Driver ICs - 2EDL8033G3C 2EDL8033G3C
120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply. The 2EDL8033G3C is available in SON-10 pins 3 mm x 3 mm package. Summary of Features 3 A & 4 A source / 6 A sink output current capability 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability for increased robustness -5 A output pin reverse current capability -12 V absolute maximum negative voltage on HS 8 V to 17 V supply voltage operating range UVLO for both high-side and low-side driver Fast propagation delay (< 35 ns) 2 ns typical delay matching Enable / disable functionality in SON-10 (3 x 3) package Offered in SON-10 (3x3) package Specified from -40ºC to 125ºC operating junction temperature range Benefits Best in class driving capability with 3 A & 4 A source / 6 A sink output current capability Helps in achieving better efficiency due to its strong source/ sink capability Strong 6 A pull down for avoiding induced turn on Tight propagation delay matching reduces dead time losses Offered in small 3 x 3 mm leadless package with industry standard pin-out Integrated bootstrap diode reduces BOM cost and increases power density Potential Applications Telecom/Datacom half- and full- bridge power converters Current-fed push-pull converters Buck converters Two-switch forward converters Active clamp forward converters Class D amplifiers DC motor drives Designers who used this product also designed with IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG65R039M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IPB60R105CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET

120 V boot 3 A high and low side junction isolated gate drivers

The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply.

The 2EDL8033G3C is available in SON-10 pins 3 mm x 3 mm package.


Summary of Features

  • 3 A & 4 A source / 6 A sink output current capability
  • 120 V absolute maximum boot voltage
  • Integrated bootstrap diode
  • -10 V to 20 V input pin capability for increased robustness
  • -5 A output pin reverse current capability
  • -12 V absolute maximum negative voltage on HS
  • 8 V to 17 V supply voltage operating range
  • UVLO for both high-side and low-side driver
  • Fast propagation delay (< 35 ns)
  • 2 ns typical delay matching
  • Enable / disable functionality in SON-10 (3 x 3) package
  • Offered in SON-10 (3x3) package
  • Specified from -40ºC to 125ºC operating junction temperature range

Benefits

  • Best in class driving capability with 3 A & 4 A source / 6 A sink output current capability
  • Helps in achieving better efficiency due to its strong source/ sink capability
  • Strong 6 A pull down for avoiding induced turn on
  • Tight propagation delay matching reduces dead time losses
  • Offered in small 3 x 3 mm leadless package with industry standard pin-out
  • Integrated bootstrap diode reduces BOM cost and increases power density

Potential Applications

  • Telecom/Datacom half- and full- bridge power converters
  • Current-fed push-pull converters
  • Buck converters
  • Two-switch forward converters
  • Active clamp forward converters
  • Class D amplifiers
  • DC motor drives

Designers who used this product also designed with


  • IMBG65R039M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IPB60R105CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMBG65R039M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IPB60R105CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMBG65R039M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IPB60R105CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8033G3C
Product Name Power - Gate Driver ICs - 2EDL8033G3C
Driver Type High-side; Low-side
Output Current 3 amps
Supply Voltage 8 to 17 volts
Propagation Delay 33 ns
Unlock Full Specs
to access all available technical data

Similar Products

SOT23 Gate Driver IC - 730-1EDN8511BXUSA1 - ERSAELECTRONICS PTE. LTD.
Specs
Driver Type Low-side; Low-Side
Number of Outputs 2; 2
Output Configuration Inverting; Inverting, Non-Inverting
View Details
6 suppliers
Power - Gate Driver ICs - 2EDN7534B - 2EDN7534B - Infineon Technologies AG
Specs
Driver Type Low-side
Output Current 5 amps
Supply Voltage 4.2 to 20 volts
View Details
Gate Drivers - 448-1EDN7146GXTMA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Driver Type High-side; Low-side
Output Configuration Noninverting
Output Current 0.5000 amps
View Details
3 suppliers
Power - Gate Driver ICs - 1EDI3051AS - 1EDI3051AS - Infineon Technologies AG
Specs
Driver Type High-side
Output Current 20 amps
Supply Voltage 4.55 to 5.5 volts
View Details