Infineon Technologies AG Gate Driver ICs 1ED3125MU12F

Description
10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3125MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3125 offers active Miller clamp, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 Compact family) For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 10 A typical sinking and sourcing peak output current 40 V absolute maximum output supply voltage 90 ns propagation delay with 30 ns input filter High common-mode transient immunity CMTI >200 kV/μs Active Miller clamp Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis Benefits Integrated filters reduce the need of external filters Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R083M1H | Silicon Carbide MOSFET Discretes BSC070N10LS5 | N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDK16G120C5 | CoolSiC™ Schottky Diodes AIMBG120R040M1 | Silicon Carbide MOSFET Discretes F3L8MR12W2M1HP_B11 | Silicon Carbide CoolSiC™ MOSFET Modules IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET 1 2 3 4 5 Find our Variations for EiceDRIVER™ compact 1ED31xx family (X3 compact family) Part No Typ. Current Feature UVLO Isolation Certification 1ED3124MU12F 14 A Seperate output 10.5/12.5 V UL 1577 1ED3125MU12F 10 A Active Miller clamp 10.5/12.5 V UL 1577 1ED3127MU12F 10 A Active Miller clamp 12/14.2 V UL 1577 1ED3140MU12F 6.5 A Seperate output 8.6/9.3 V UL 1577 1ED3141MU12F 6.5 A Seperate output 11.1/12 V UL 1577 1ED3142MU12F 6.5 A Seperate output 12.6/13.6 V UL 1577 Part No Typ. Current Feature UVLO Isolation Certification
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Description
10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3125MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3125 offers active Miller clamp, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 Compact family) For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 10 A typical sinking and sourcing peak output current 40 V absolute maximum output supply voltage 90 ns propagation delay with 30 ns input filter High common-mode transient immunity CMTI >200 kV/μs Active Miller clamp Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis Benefits Integrated filters reduce the need of external filters Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R083M1H | Silicon Carbide MOSFET Discretes BSC070N10LS5 | N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDK16G120C5 | CoolSiC™ Schottky Diodes AIMBG120R040M1 | Silicon Carbide MOSFET Discretes F3L8MR12W2M1HP_B11 | Silicon Carbide CoolSiC™ MOSFET Modules IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET 1 2 3 4 5 Find our Variations for EiceDRIVER™ compact 1ED31xx family (X3 compact family) Part No Typ. Current Feature UVLO Isolation Certification 1ED3124MU12F 14 A Seperate output 10.5/12.5 V UL 1577 1ED3125MU12F 10 A Active Miller clamp 10.5/12.5 V UL 1577 1ED3127MU12F 10 A Active Miller clamp 12/14.2 V UL 1577 1ED3140MU12F 6.5 A Seperate output 8.6/9.3 V UL 1577 1ED3141MU12F 6.5 A Seperate output 11.1/12 V UL 1577 1ED3142MU12F 6.5 A Seperate output 12.6/13.6 V UL 1577 Part No Typ. Current Feature UVLO Isolation Certification
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Gate Driver ICs - 1ED3125MU12F - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
1ED3125MU12F
Gate Driver ICs 1ED3125MU12F
10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3125MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3125 offers active Miller clamp, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 Compact family) For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 10 A typical sinking and sourcing peak output current 40 V absolute maximum output supply voltage 90 ns propagation delay with 30 ns input filter High common-mode transient immunity CMTI >200 kV/μs Active Miller clamp Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis Benefits Integrated filters reduce the need of external filters Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R083M1H | Silicon Carbide MOSFET Discretes BSC070N10LS5 | N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDK16G120C5 | CoolSiC™ Schottky Diodes AIMBG120R040M1 | Silicon Carbide MOSFET Discretes F3L8MR12W2M1HP_B11 | Silicon Carbide CoolSiC™ MOSFET Modules IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPD80R2K7C3A | Automotive MOSFET DF100R07W1H5FP_B54 | IGBT modules ICE5QR0680AG | CoolSET™ Quasi Resonant IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC052N03LS | N-Channel Power MOSFET 1 2 3 4 5 Find our Variations for EiceDRIVER™ compact 1ED31xx family (X3 compact family) Part No Typ. Current Feature UVLO Isolation Certification 1ED3124MU12F 14 A Seperate output 10.5/12.5 V UL 1577 1ED3125MU12F 10 A Active Miller clamp 10.5/12.5 V UL 1577 1ED3127MU12F 10 A Active Miller clamp 12/14.2 V UL 1577 1ED3140MU12F 6.5 A Seperate output 8.6/9.3 V UL 1577 1ED3141MU12F 6.5 A Seperate output 11.1/12 V UL 1577 1ED3142MU12F 6.5 A Seperate output 12.6/13.6 V UL 1577 Part No Typ. Current Feature UVLO Isolation Certification

10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO

EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs.

1ED3125MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3125 offers active Miller clamp, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.


Summary of Features

  • EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 Compact family)
  • For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • 10 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • 90 ns propagation delay with 30 ns input filter
  • High common-mode transient immunity CMTI >200 kV/μs
  • Active Miller clamp
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package
  • 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis

Benefits

  • Integrated filters reduce the need of external filters
  • Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
  • Suitable for operation at high ambient temperature and in fast switching applications
  • UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • The precise threshold and timings, combined with UL 1577 certification enable superior application safety

Applications

  • 1-phase string inverter solutions
  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Edge computing
  • EV charging

Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.

Learn more about the transformer driver ICs


Designers who used this product also designed with


  • 2EDN7524G |
    Gate driver ICs
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • IPD80R2K7C3A |
    Automotive MOSFET
  • DF100R07W1H5FP_B54 |
    IGBT modules
  • ICE5QR0680AG |
    CoolSET™ Quasi Resonant
  • IPD80R900P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC052N03LS |
    N-Channel Power MOSFET
  • IPL60R115CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMZA65R083M1H |
    Silicon Carbide MOSFET Discretes
  • BSC070N10LS5 |
    N-Channel Power MOSFET
  • IPT60R075CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDK16G120C5 |
    CoolSiC™ Schottky Diodes
  • AIMBG120R040M1 |
    Silicon Carbide MOSFET Discretes
  • F3L8MR12W2M1HP_B11 |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP023N08N5 |
    N-Channel Power MOSFET
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSC021N08NS5 |
    N-Channel Power MOSFET
  • 2EDN7524G |
    Gate driver ICs
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • IPD80R2K7C3A |
    Automotive MOSFET
  • DF100R07W1H5FP_B54 |
    IGBT modules
  • ICE5QR0680AG |
    CoolSET™ Quasi Resonant
  • IPD80R900P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC052N03LS |
    N-Channel Power MOSFET

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Find our Variations for EiceDRIVER™ compact 1ED31xx family (X3 compact family)

Part No Typ. Current Feature UVLO Isolation Certification

1ED3124MU12F

14 A Seperate output

10.5/12.5 V

UL 1577

1ED3125MU12F

10 A

Active Miller clamp

10.5/12.5 V

UL 1577

1ED3127MU12F

10 A Active Miller clamp

12/14.2 V

UL 1577

1ED3140MU12F

6.5 A Seperate output

8.6/9.3 V

UL 1577

1ED3141MU12F

6.5 A Seperate output

11.1/12 V

UL 1577

1ED3142MU12F

6.5 A Seperate output

12.6/13.6 V

UL 1577


Part No Typ. Current Feature UVLO Isolation Certification

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 1ED3125MU12F
Product Name Gate Driver ICs
Driver Type High-side
Output Current 10 amps
Supply Voltage 3.1 to 17 volts
Propagation Delay 90 ns
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