Infineon Technologies AG Gate Driver ICs 1EDN7550B

Description
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs for configurable common mode robustness 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 4V UVLO version SOT-23 package Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPD60R180CM8 | 600 V CoolMOS™ 8 IDL06G65C5 | CoolSiC™ Schottky Diodes IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes BSC093N15NS5 | N-Channel Power MOSFET IDDD08G65C6 | CoolSiC™ Schottky Diodes IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet
Description
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs for configurable common mode robustness 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 4V UVLO version SOT-23 package Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPD60R180CM8 | 600 V CoolMOS™ 8 IDL06G65C5 | CoolSiC™ Schottky Diodes IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes BSC093N15NS5 | N-Channel Power MOSFET IDDD08G65C6 | CoolSiC™ Schottky Diodes IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 1EDN7550B - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
1EDN7550B
Gate Driver ICs 1EDN7550B
1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in: Boost-PFC with Kelvin-source MOSFETs Synchronous rectification stages Designs with long distance between control IC and gate-driver IC Buck-boost converters Low- and medium-voltage half-bridges High density 48V to 12V intermediate bus converter Summary of Features Truly differential inputs for configurable common mode robustness 4A source current 8A sink current Separate source/sink outputs Low-ohmic output stage 29ns input minimum pulse width -7 ns/+10 ns propagation delay accuracy 5A reverse current robustness of the outputs 4V UVLO version SOT-23 package Benefits Robust Small PCB layout flexibility High power density Short time to market Potential applications Boost-PFCs with Kelvin-source MOSFETs Interleaved PFC Full-bridge synchronous rectification stages 48V to 12V intermediate bus converters Buck-boost converters Low- and medium-voltage half-bridges Application benefits Robust against ground shifts from power MOSFET switching Low MOSFET switching losses Robust against false MOSFET triggering Highest effective MOSFET driving power Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal operation High power density Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPD60R180CM8 | 600 V CoolMOS™ 8 IDL06G65C5 | CoolSiC™ Schottky Diodes IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes BSC093N15NS5 | N-Channel Power MOSFET IDDD08G65C6 | CoolSiC™ Schottky Diodes IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4

1-channel non-isolated gate-driver IC family with truly differential inputs

The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in:

  • Boost-PFC with Kelvin-source MOSFETs
  • Synchronous rectification stages
  • Designs with long distance between control IC and gate-driver IC
  • Buck-boost converters
  • Low- and medium-voltage half-bridges
  • High density 48V to 12V intermediate bus converter

Summary of Features

  • Truly differential inputs for configurable common mode robustness
  • 4A source current
  • 8A sink current
  • Separate source/sink outputs
  • Low-ohmic output stage
  • 29ns input minimum pulse width
  • -7 ns/+10 ns propagation delay accuracy
  • 5A reverse current robustness of the outputs
  • 4V UVLO version
  • SOT-23 package

Benefits

  • Robust
  • Small
  • PCB layout flexibility
  • High power density
  • Short time to market

Potential applications

  • Boost-PFCs with Kelvin-source MOSFETs
  • Interleaved PFC
  • Full-bridge synchronous rectification stages
  • 48V to 12V intermediate bus converters
  • Buck-boost converters
  • Low- and medium-voltage half-bridges

Application benefits

  • Robust against ground shifts from power MOSFET switching
  • Low MOSFET switching losses
  • Robust against false MOSFET triggering
  • Highest effective MOSFET driving power
  • Efficiency gains
  • Increased power density and BOM savings
  • Instant MOSFET protection under abnormal operation
  • High power density

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Edge computing
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPDD60R190G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • IPDD60R125G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R125C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IPD60R180CM8 |
    600 V CoolMOS™ 8
  • IDL06G65C5 |
    CoolSiC™ Schottky Diodes
  • IPN80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDL10G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • IDDD08G65C6 |
    CoolSiC™ Schottky Diodes
  • IPDD60R190G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • IPDD60R125G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers - 1348679-1EDN7550B - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
1348679-1EDN7550B
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers 1348679-1EDN7550B
Win Source Part Number: 1348679-1EDN7550B Category: Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers Series: EiceDriver™ Package: Bulk Standard Package: 1 Channel Type: Single Input Type: Inverting, Non-Inverting Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 8A Rise / Fall Time (Typ): 6.5ns, 4.5ns Voltage - Supply: 4.5V ~ 20V Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: PG-SOT23-6-3 Temperature Range - Operating: -40°C ~ 150°C (TJ) Fake Threat In the Open Market: 52 pct. HTSUS: 0000.00.0000 Mfr: Infineon Technologies Base Product Number: 1EDN7550

Win Source Part Number: 1348679-1EDN7550B
Category: Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Series: EiceDriver™
Package: Bulk
Standard Package: 1
Channel Type: Single
Input Type: Inverting, Non-Inverting
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Voltage - Supply: 4.5V ~ 20V
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: PG-SOT23-6-3
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
HTSUS: 0000.00.0000
Mfr: Infineon Technologies
Base Product Number: 1EDN7550

Buy Now Datasheet
Gate Drivers - 1EDN7550B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
1EDN7550B
Gate Drivers 1EDN7550B
High-Side and Low-Side Gate Driver IC Inverting, Non-Inverting PG-SOT23-6-3

High-Side and Low-Side Gate Driver IC Inverting, Non-Inverting PG-SOT23-6-3

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics Quarktwin Technology Ltd.
Product Category Gate Drivers Gate Drivers Gate Drivers
Product Number 1EDN7550B 1348679-1EDN7550B 1EDN7550B
Product Name Gate Driver ICs Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers Gate Drivers
Driver Type High-side; Low-side High-side; Low-side High-side; Low-side
Output Current 4 amps 8 amps 8 amps
Supply Voltage 4.2 to 20 volts 4.5 to 20 volts 4.5 to 20 volts
Propagation Delay 45 ns
Package Type PG-SOT23-6 SOT-23-6
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