Infineon Technologies AG Gate Driver ICs 2ED2183S06F

Description
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21834S06J. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (400 ns) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, /LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Cordless power tools and outdoor power equipment Home appliances Motor Control Power conversion Power tools Find our Variations for 2ED2183S06F Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime
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Description
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21834S06J. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (400 ns) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, /LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Cordless power tools and outdoor power equipment Home appliances Motor Control Power conversion Power tools Find our Variations for 2ED2183S06F Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime
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Suppliers

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Product
Description
Supplier Links
Gate Driver ICs - 2ED2183S06F - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2ED2183S06F
Gate Driver ICs 2ED2183S06F
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21834S06J. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (400 ns) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, /LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Cordless power tools and outdoor power equipment Home appliances Motor Control Power conversion Power tools Find our Variations for 2ED2183S06F Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package

650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21834S06J.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.


Summary of Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • Floating channel designed for bootstrap operation
  • Integrated shoot-through protection with built-in dead time (400 ns)
  • Maximum supply voltage of 25 V
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • HIN, /LIN input logic
  • Logic Operational up to –11 V on VS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Benefits

  • High current gate driver - suitable for high current power device, and high frequency application
  • Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin

Applications

  • Cordless power tools and outdoor power equipment
  • Home appliances
  • Motor Control
  • Power conversion
  • Power tools

Find our Variations for 2ED2183S06F

Part No Package Input logic Interlock Deadtime
2ED2181S06F DSO - 8 HIN, LIN No

None


2ED21814S06J DSO - 14 HIN, LIN No

None

2ED2182S06F

DSO - 8 HIN, LIN Yes Internal 400 ns

2ED21824S06J

DSO - 14 HIN, LIN

Yes

Programmable 400 ns - 5000 ns


2ED21834S06J DSO – 14 HIN, /LIN

Yes

Programmable 400 ns - 5000 ns


2ED2184S06F DSO - 8 IN, /SD

Yes

Internal 400 ns


2ED21844S06J DSO – 14

IN, /SD

Yes

Programmable 400 ns - 5000 ns


Part No Package Input logic Interlock Deadtime

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED2183S06F
Product Name Gate Driver ICs
Driver Type Dual Gate Driver
Output Current 2.5 amps
Supply Voltage 10 to 20 volts
Propagation Delay 200 ns
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