Infineon Technologies AG Gate Driver ICs 2ED2182S06F

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version is also available: 2ED21824S06J. Based on our Infineon's SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (400 ns) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Cordless power tools and outdoor power equipment EV charging Home appliances Motor Control Smart induction cooktop – precise and efficient heating control Find our Variations for 2ED2182S06F Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with BSC035N10NS5 | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family IPT012N06N | N-Channel Power MOSFET CY9BF122MPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family BSC035N10NS5 | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family IPT012N06N | N-Channel Power MOSFET CY9BF122MPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family BSC035N10NS5 | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 1 2