Infineon Technologies AG Gate Driver ICs 2EDN7524G

Fast dual-channel 5A gate driver optimized for driving both standard and superjunction MOSFETs, as well as GaN power switching devices. The input signals are low voltage TTL and 3.3V CMOS-compatible with a very broad voltage handling capability of up to +20V and down to -10VDC. The unique ability to handle -10VDC at the input pins protects the device against ground bouncing. Each of the two outputs is able to sink and source a 5A current utilizing a true rail-to-rail output stage, which ensures very low impedances of 0.7Ω up to the positive and 0.55Ω down to the negative rail respectively. Excellent channel to channel delay matching, typ. 1ns, enables risk-free doubling of the source and sink capability up to 10A peak through paralleling of both channels. The combination of industry standard pin-outs and different logic input/output configurations guarantee high flexibility and shortens R&D time. The gate driver is available in the three package options: PG-DSO-8-pin, PG-VDSON-8-pin and PG-TDSSO-8-pin (small form-factor, improved thermal performance compared to DSO-8). Summary of Features 5A peak source/sink current 5ns (typ.) rise/fall times < 10ns propagation delay tolerance 8V UVLO option 19 ns (typ.) propagation delay for both, for control inputs and for enable -10V control and enable input robustness Outputs robust against reverse current 2 independent channels < 1ns channel-to-channel miss-match Industry standard pin-out and packages Benefits Fast Miller plateau transition Precise timing Fast and reliable MOSFET turn-off, independent of control IC Increased GND-bounce robustness Saves switching diodes Option to increase drive current by truly concurrent switching of 2 channels Straight-forward design up-grades Potential Applications Switch mode power supplies DC-DC converters Motor control Solar inverters Industrial Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Uninterruptible power supplies (UPS) The perfect match: Infineon's CoolMOS™ Power MOSFETs Find products and download related material Designers who used this product also designed with BSC025N08LS5 | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC026N08NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IDH10G65C6 | CoolSiC™ Schottky Diodes IPW65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IDH20G65C6 | CoolSiC™ Schottky Diodes IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ22DN20NS3 G | N-Channel Power MOSFET BSC025N08LS5 | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC026N08NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET 1 2 3 4 5