Infineon Technologies AG Gate Driver ICs 2ED21844S06J

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-14 package 650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2184S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for Maximum Creepage and Clearance Separate logic and power ground Floating channel designed for bootstrap operation Integrated shoot-through protection with built-in dead time (programmable deadtime) Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay IN, /SD input logic, Shutdown input turns off both channels Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications EV charging Home appliances Industrial robots system solutions for Industry 4.0 Light electric vehicles (LEV) Smart induction cooktop – precise and efficient heating control Find our Variations for 2ED21844S06J Part No Package Input logic Interlock Deadtime 2ED2181S06F DSO - 8 HIN, LIN No None 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with IPD079N06L3 G | N-Channel Power MOSFET FF600R12KE7 | IGBT modules IPD079N06L3 G | N-Channel Power MOSFET FF600R12KE7 | IGBT modules IPD079N06L3 G | N-Channel Power MOSFET FF600R12KE7 | IGBT modules