Infineon Technologies AG Gate Driver ICs 2EDN8534F

Description
EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching devices. The EiceDRIVER™ 2EDN family is offered in 8-pin DSO, TSSOP and WSON packages as well as in small and versatile 6-pins SOT23 and TSNP package. High-output-current capability, tight-timing specifications, and reduced output start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications. Active output clamping shortens the startup time of bootstrapped designs. Summary of Features Up to ±5 A source/sink currents 19 ns typ. propagation delay +6/-4 ns propagation delay accuracy 1.8 µs output start-up time 500 ns output shut-down time Active output voltage clamping -12 V input robustness 5 A reverse current robustness 4 V and 8 V UVLO options Package options: 8-pin DSO, TSSOP, WSON 6-pin SOT23 Fully qualified for industrial applications according to JEDEC Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom DC-DC Converters Power tools Industrial SMPS Low speed electrical vehicles Solar power inverter LED lighting Applications Complete system solutions for smart TVs Designers who used this product also designed with IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes 1 2 3
Request a Quote Datasheet
Description
EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching devices. The EiceDRIVER™ 2EDN family is offered in 8-pin DSO, TSSOP and WSON packages as well as in small and versatile 6-pins SOT23 and TSNP package. High-output-current capability, tight-timing specifications, and reduced output start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications. Active output clamping shortens the startup time of bootstrapped designs. Summary of Features Up to ±5 A source/sink currents 19 ns typ. propagation delay +6/-4 ns propagation delay accuracy 1.8 µs output start-up time 500 ns output shut-down time Active output voltage clamping -12 V input robustness 5 A reverse current robustness 4 V and 8 V UVLO options Package options: 8-pin DSO, TSSOP, WSON 6-pin SOT23 Fully qualified for industrial applications according to JEDEC Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom DC-DC Converters Power tools Industrial SMPS Low speed electrical vehicles Solar power inverter LED lighting Applications Complete system solutions for smart TVs Designers who used this product also designed with IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 2EDN8534F - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2EDN8534F
Gate Driver ICs 2EDN8534F
EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching devices. The EiceDRIVER™ 2EDN family is offered in 8-pin DSO, TSSOP and WSON packages as well as in small and versatile 6-pins SOT23 and TSNP package. High-output-current capability, tight-timing specifications, and reduced output start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications. Active output clamping shortens the startup time of bootstrapped designs. Summary of Features Up to ±5 A source/sink currents 19 ns typ. propagation delay +6/-4 ns propagation delay accuracy 1.8 µs output start-up time 500 ns output shut-down time Active output voltage clamping -12 V input robustness 5 A reverse current robustness 4 V and 8 V UVLO options Package options: 8-pin DSO, TSSOP, WSON 6-pin SOT23 Fully qualified for industrial applications according to JEDEC Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom DC-DC Converters Power tools Industrial SMPS Low speed electrical vehicles Solar power inverter LED lighting Applications Complete system solutions for smart TVs Designers who used this product also designed with IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPP075N15N3 G N-Channel Power MOSFET BSS127 | Small signal/small power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPA083N10N5 | N-Channel Power MOSFET IPA60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes 1 2 3

EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches

Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching devices.

The EiceDRIVER™ 2EDN family is offered in 8-pin DSO, TSSOP and WSON packages as well as in small and versatile 6-pins SOT23 and TSNP package. High-output-current capability, tight-timing specifications, and reduced output start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications. Active output clamping shortens the startup time of bootstrapped designs.


Summary of Features

  • Up to ±5 A source/sink currents
  • 19 ns typ. propagation delay
  • +6/-4 ns propagation delay accuracy
  • 1.8 µs output start-up time
  • 500 ns output shut-down time
  • Active output voltage clamping
  • -12 V input robustness
  • 5 A reverse current robustness
  • 4 V and 8 V UVLO options
  • Package options:
    • 8-pin DSO, TSSOP, WSON
    • 6-pin SOT23
  • Fully qualified for industrial applications according to JEDEC

Benefits

  • High power efficiency
  • Higher FETs drive capability
  • Instant FETs protection under abnormal operation
  • Crucial safety margin to drive pulse transformer

Potential Applications

  • Server
  • Telecom
  • DC-DC Converters
  • Power tools
  • Industrial SMPS
  • Low speed electrical vehicles
  • Solar power inverter
  • LED lighting

Applications

  • Complete system solutions for smart TVs

Designers who used this product also designed with


  • IPW60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IPP075N15N3 G
    N-Channel Power MOSFET
  • BSS127 |
    Small signal/small power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • IPA60R125P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IPP075N15N3 G
    N-Channel Power MOSFET
  • BSS127 |
    Small signal/small power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • IPA60R125P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDN8534F
Product Name Gate Driver ICs
Driver Type Low-side
Output Current 5 amps
Supply Voltage 8 to 20 volts
Propagation Delay 19 ns
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