Infineon Technologies AG Power - Gate Driver ICs - Automotive gate driver ICs - 2ED4820-EM 2ED4820-EM

Description
48 V smart high-side MOSFET gate driver with SPI for automotive applications The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced turn-on and turn-off ability of the driver the number of MOSFETs could be easily scaled up to manage large currents in the order of several hundred amps while ensuring a fast switch on and off. The MOSFETs could be controlled in a back-to-back configuration either common mode or common source. The integrated current sense amplifier supports high-side and even low-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along with several latching failure detections, to implement protections for the external MOSFETs, the load, and the power source. Parameters can be adjusted by SPI; monitoring data, configuration, warning, and failure detection registers can be read. Summary of Features Extended supply voltage range: 20 - 70 V Two independent high-side gate driver outputs with 1 A pull-down, 0.3 A pull up for fast switch off/on Low supply current in sleep mode IBAT_Q < 5 µA Device control, configuration, and diagnostic via SPI Configurable overcurrent/ short circuit protection Configurable Drain-Source overvoltage protection Gate under-voltage lockout (VGS) Ground loss detection AEC-Q100 qualification Lead-Free, Halogen Free, RoHS compliant Back2Back MOSFET support SPI Interface Current sensing Benefits Supports back-to-back MOSFET topologies (common drain or common source) SAFESTATEN input to trigger safe state mode in case of µC failure One bidirectional high- or low-side analog current sense interface with configurable gain to optimize power losses Robust against Vbat voltages up to 105 V and Vsource voltages versus Vbat of -90 V PRO-SIL(TM) ISO 26262-ready for supporting the integrator in evaluation of hardware element acc. ISO 26262 Potential Applications Battery protection switch Input protection switch Static load and supply switch for high currents Access to ISO 26262-ready documentation Please register for myinfineon.com with your company e-mail address Please get in touch with your respective Distribution or Sales contact to request the elevation of your myInfineon account to partner status; this is required for access to our MyICP portal Complementary Products: OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Battery Management IC’s TLE9012AQU Battery Management IC’s TLE9015QU MOSFET 80V IAUS300N08S5N011 MOSFET 80V IAUA250N08S5N018 MOSFET 100V IAUS300N10S5N014 OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Applications 48 V to 12 V DC-DC converter Automotive 48 V battery management system (BMS) Electric power steering (EPS) Light electric vehicles (LEV)
Request a Quote Datasheet
Description
48 V smart high-side MOSFET gate driver with SPI for automotive applications The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced turn-on and turn-off ability of the driver the number of MOSFETs could be easily scaled up to manage large currents in the order of several hundred amps while ensuring a fast switch on and off. The MOSFETs could be controlled in a back-to-back configuration either common mode or common source. The integrated current sense amplifier supports high-side and even low-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along with several latching failure detections, to implement protections for the external MOSFETs, the load, and the power source. Parameters can be adjusted by SPI; monitoring data, configuration, warning, and failure detection registers can be read. Summary of Features Extended supply voltage range: 20 - 70 V Two independent high-side gate driver outputs with 1 A pull-down, 0.3 A pull up for fast switch off/on Low supply current in sleep mode IBAT_Q < 5 µA Device control, configuration, and diagnostic via SPI Configurable overcurrent/ short circuit protection Configurable Drain-Source overvoltage protection Gate under-voltage lockout (VGS) Ground loss detection AEC-Q100 qualification Lead-Free, Halogen Free, RoHS compliant Back2Back MOSFET support SPI Interface Current sensing Benefits Supports back-to-back MOSFET topologies (common drain or common source) SAFESTATEN input to trigger safe state mode in case of µC failure One bidirectional high- or low-side analog current sense interface with configurable gain to optimize power losses Robust against Vbat voltages up to 105 V and Vsource voltages versus Vbat of -90 V PRO-SIL(TM) ISO 26262-ready for supporting the integrator in evaluation of hardware element acc. ISO 26262 Potential Applications Battery protection switch Input protection switch Static load and supply switch for high currents Access to ISO 26262-ready documentation Please register for myinfineon.com with your company e-mail address Please get in touch with your respective Distribution or Sales contact to request the elevation of your myInfineon account to partner status; this is required for access to our MyICP portal Complementary Products: OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Battery Management IC’s TLE9012AQU Battery Management IC’s TLE9015QU MOSFET 80V IAUS300N08S5N011 MOSFET 80V IAUA250N08S5N018 MOSFET 100V IAUS300N10S5N014 OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Applications 48 V to 12 V DC-DC converter Automotive 48 V battery management system (BMS) Electric power steering (EPS) Light electric vehicles (LEV)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - Automotive gate driver ICs - 2ED4820-EM - 2ED4820-EM - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - Automotive gate driver ICs - 2ED4820-EM
2ED4820-EM
Power - Gate Driver ICs - Automotive gate driver ICs - 2ED4820-EM 2ED4820-EM
48 V smart high-side MOSFET gate driver with SPI for automotive applications The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced turn-on and turn-off ability of the driver the number of MOSFETs could be easily scaled up to manage large currents in the order of several hundred amps while ensuring a fast switch on and off. The MOSFETs could be controlled in a back-to-back configuration either common mode or common source. The integrated current sense amplifier supports high-side and even low-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along with several latching failure detections, to implement protections for the external MOSFETs, the load, and the power source. Parameters can be adjusted by SPI; monitoring data, configuration, warning, and failure detection registers can be read. Summary of Features Extended supply voltage range: 20 - 70 V Two independent high-side gate driver outputs with 1 A pull-down, 0.3 A pull up for fast switch off/on Low supply current in sleep mode IBAT_Q < 5 µA Device control, configuration, and diagnostic via SPI Configurable overcurrent/ short circuit protection Configurable Drain-Source overvoltage protection Gate under-voltage lockout (VGS) Ground loss detection AEC-Q100 qualification Lead-Free, Halogen Free, RoHS compliant Back2Back MOSFET support SPI Interface Current sensing Benefits Supports back-to-back MOSFET topologies (common drain or common source) SAFESTATEN input to trigger safe state mode in case of µC failure One bidirectional high- or low-side analog current sense interface with configurable gain to optimize power losses Robust against Vbat voltages up to 105 V and Vsource voltages versus Vbat of -90 V PRO-SIL(TM) ISO 26262-ready for supporting the integrator in evaluation of hardware element acc. ISO 26262 Potential Applications Battery protection switch Input protection switch Static load and supply switch for high currents Access to ISO 26262-ready documentation Please register for myinfineon.com with your company e-mail address Please get in touch with your respective Distribution or Sales contact to request the elevation of your myInfineon account to partner status; this is required for access to our MyICP portal Complementary Products: OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Battery Management IC’s TLE9012AQU Battery Management IC’s TLE9015QU MOSFET 80V IAUS300N08S5N011 MOSFET 80V IAUA250N08S5N018 MOSFET 100V IAUS300N10S5N014 OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Applications 48 V to 12 V DC-DC converter Automotive 48 V battery management system (BMS) Electric power steering (EPS) Light electric vehicles (LEV)

48 V smart high-side MOSFET gate driver with SPI for automotive applications

The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced turn-on and turn-off ability of the driver the number of MOSFETs could be easily scaled up to manage large currents in the order of several hundred amps while ensuring a fast switch on and off. The MOSFETs could be controlled in a back-to-back configuration either common mode or common source.

The integrated current sense amplifier supports high-side and even low-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along with several latching failure detections, to implement protections for the external MOSFETs, the load, and the power source. Parameters can be adjusted by SPI; monitoring data, configuration, warning, and failure detection registers can be read.


Summary of Features

  • Extended supply voltage range: 20 - 70 V
  • Two independent high-side gate driver outputs with 1 A pull-down, 0.3 A pull up for fast switch off/on
  • Low supply current in sleep mode IBAT_Q < 5 µA
  • Device control, configuration, and diagnostic via SPI
  • Configurable overcurrent/ short circuit protection
  • Configurable Drain-Source overvoltage protection
  • Gate under-voltage lockout (VGS)
  • Ground loss detection
  • AEC-Q100 qualification
  • Lead-Free, Halogen Free, RoHS compliant
  • Back2Back MOSFET support
  • SPI Interface
  • Current sensing

Benefits

  • Supports back-to-back MOSFET topologies (common drain or common source)
  • SAFESTATEN input to trigger safe state mode in case of µC failure
  • One bidirectional high- or low-side analog current sense interface with configurable gain to optimize power losses
  • Robust against Vbat voltages up to 105 V and Vsource voltages versus Vbat of -90 V
  • PRO-SIL(TM) ISO 26262-ready for supporting the integrator in evaluation of hardware element acc. ISO 26262

Potential Applications

  • Battery protection switch
  • Input protection switch
  • Static load and supply switch for high currents

Access to ISO 26262-ready documentation

  • Please register for myinfineon.com with your company e-mail address
  • Please get in touch with your respective Distribution or Sales contact to request the elevation of your myInfineon account to partner status; this is required for access to our MyICP portal

Complementary Products:

OPTIREG™ PMIC (Automotive) TLF35584QVVS2
Battery Management IC’s TLE9012AQU
Battery Management IC’s TLE9015QU
MOSFET 80V IAUS300N08S5N011
MOSFET 80V IAUA250N08S5N018
MOSFET 100V IAUS300N10S5N014
OPTIREG™ PMIC (Automotive) TLF35584QVVS2

Applications

  • 48 V to 12 V DC-DC converter
  • Automotive 48 V battery management system (BMS)
  • Electric power steering (EPS)
  • Light electric vehicles (LEV)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED4820-EM
Product Name Power - Gate Driver ICs - Automotive gate driver ICs - 2ED4820-EM
Driver Type High-side
Output Current 0.3000 amps
Supply Voltage 20 to 70 volts
Propagation Delay 3000 ns
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