Infineon Technologies AG Gate Driver ICs 2ED2108S06F

650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-8 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available: 2ED21084S06J. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay Internal 540 ns dead time HIN, /LIN logic input Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Home appliances Motor Control Power conversion Power tools Find our Variations for 2ED2108S06F Part No Package Input logic Interlock Deadtime 2ED2106S06F DSO - 8 HIN, LIN No None 2ED21064S06J DSO - 14 HIN, LIN No None 2ED21084S06J DSO - 14 HIN, /LIN Yes Programmable 540 ns - 5000 ns 2ED2109S06F DSO - 8 IN, /SD Yes Internal 540 ns 2ED21094S06J DSO - 14 IN, /SD Yes Programmable 540 ns - 5000 ns 2ED21091S06F DSO - 8 IN, DT/SD Yes Programmable 540 ns - 2700 ns Part No Package Input logic Interlock Deadtime