Infineon Technologies AG Power - Gate Driver ICs - 2ED1321S12M 2ED1321S12M

Description
EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range. Summary of Features Unique Infineon thin-film-Silicon On Insulator (SOI)-technology Maximum bootstrap voltage (VB node) of + 1225 V Operating voltages (VS node) upto + 1200 V Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses 2.3 A / 4.6 A peak output source / sink current capability Integrated ultra-fast over-current protection (OCP) ± 5% high accuracy reference threshold Shutdown less than 1 us Integrated ultra-fast, low resistance bootstrap diode Integrated dead-time and shoot-through prevention logic Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per channel under voltage lockout (UVLO) 25 V VCC supply voltage (maximum) Separate Logic (VSS) and output ground (COM) 300 mils wide body for greater than 5mm clearance / creepage 2 kV HBM ESD capability Benefits 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch 100 V negative VS increased reliability / robustness 50% lower level shift losses leads lower temperature operation and higher reliability Latch-up immune increased reliability Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches Under-voltage lockout provides protection at low supply voltage Applications Ceiling fan - motor control and drive solutions Heating ventilation and air conditioning (HVAC) Industrial motor drives and controls Residential heat pumps
Request a Quote Datasheet
Description
EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range. Summary of Features Unique Infineon thin-film-Silicon On Insulator (SOI)-technology Maximum bootstrap voltage (VB node) of + 1225 V Operating voltages (VS node) upto + 1200 V Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses 2.3 A / 4.6 A peak output source / sink current capability Integrated ultra-fast over-current protection (OCP) ± 5% high accuracy reference threshold Shutdown less than 1 us Integrated ultra-fast, low resistance bootstrap diode Integrated dead-time and shoot-through prevention logic Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per channel under voltage lockout (UVLO) 25 V VCC supply voltage (maximum) Separate Logic (VSS) and output ground (COM) 300 mils wide body for greater than 5mm clearance / creepage 2 kV HBM ESD capability Benefits 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch 100 V negative VS increased reliability / robustness 50% lower level shift losses leads lower temperature operation and higher reliability Latch-up immune increased reliability Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches Under-voltage lockout provides protection at low supply voltage Applications Ceiling fan - motor control and drive solutions Heating ventilation and air conditioning (HVAC) Industrial motor drives and controls Residential heat pumps
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2ED1321S12M - 2ED1321S12M - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2ED1321S12M
2ED1321S12M
Power - Gate Driver ICs - 2ED1321S12M 2ED1321S12M
EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range. Summary of Features Unique Infineon thin-film-Silicon On Insulator (SOI)-technology Maximum bootstrap voltage (VB node) of + 1225 V Operating voltages (VS node) upto + 1200 V Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses 2.3 A / 4.6 A peak output source / sink current capability Integrated ultra-fast over-current protection (OCP) ± 5% high accuracy reference threshold Shutdown less than 1 us Integrated ultra-fast, low resistance bootstrap diode Integrated dead-time and shoot-through prevention logic Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per channel under voltage lockout (UVLO) 25 V VCC supply voltage (maximum) Separate Logic (VSS) and output ground (COM) 300 mils wide body for greater than 5mm clearance / creepage 2 kV HBM ESD capability Benefits 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch 100 V negative VS increased reliability / robustness 50% lower level shift losses leads lower temperature operation and higher reliability Latch-up immune increased reliability Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches Under-voltage lockout provides protection at low supply voltage Applications Ceiling fan - motor control and drive solutions Heating ventilation and air conditioning (HVAC) Industrial motor drives and controls Residential heat pumps

EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.


Summary of Features

  • Unique Infineon thin-film-Silicon On Insulator (SOI)-technology
  • Maximum bootstrap voltage (VB node) of + 1225 V
  • Operating voltages (VS node) upto + 1200 V
  • Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses
  • 2.3 A / 4.6 A peak output source / sink current capability
  • Integrated ultra-fast over-current protection (OCP)
  • ± 5% high accuracy reference threshold
  • Shutdown less than 1 us
  • Integrated ultra-fast, low resistance bootstrap diode
  • Integrated dead-time and shoot-through prevention logic
  • Enable, Fault, and programmable Fault clear RFE input
  • Logic operational up to –8 V on VS Pin
  • Independent per channel under voltage lockout (UVLO)
  • 25 V VCC supply voltage (maximum)
  • Separate Logic (VSS) and output ground (COM)
  • 300 mils wide body for greater than 5mm clearance / creepage
  • 2 kV HBM ESD capability

Benefits

  • 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
  • Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch
  • 100 V negative VS increased reliability / robustness
  • 50% lower level shift losses leads lower temperature operation and higher reliability
  • Latch-up immune increased reliability
  • Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
  • Under-voltage lockout provides protection at low supply voltage

Applications

  • Ceiling fan - motor control and drive solutions
  • Heating ventilation and air conditioning (HVAC)
  • Industrial motor drives and controls
  • Residential heat pumps
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED1321S12M
Product Name Power - Gate Driver ICs - 2ED1321S12M
Driver Type High-side; Low-side
Output Current 2.3 amps
Supply Voltage -1 to 25 volts
Propagation Delay 350 ns
Unlock Full Specs
to access all available technical data

Similar Products

Isolators - Isolators - Gate Drivers - 1352995-1EDB7275FXUMA1 - Win Source Electronics
Specs
Output Voltage 20 volts
Rise Time 8.3 ns
Fall Time 5 ns
View Details
4 suppliers
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers - 1338388-2ED2184S06FXUMA1 - Win Source Electronics
Specs
Driver Type Dual Gate Driver
Output Configuration Noninverting
Output Current 2.5 amps
View Details
5 suppliers
Isolators - Isolators - Gate Drivers - 1ED3131MU12HXUMA1 - Shenzhen Shengyu Electronics Technology Limited
Specs
Packing Method Tape Reel; Bulk; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR,Bulk; Other
View Details
2 suppliers