Infineon Technologies AG Power - Gate Driver ICs - 1EDN7126U 1EDN7126U

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The 1EDN7126U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 1.5 A peak source and sink current, active Miller clamp, and bootstrap voltage clamp. Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7126U to address even high-side applications. Summary of Features Fully differential logic input circuitry to avoid false triggering in low-side or high-side operation High common-mode input voltage range (CMR) up to ± 200 V for high side operation High immunity to common-mode slew rate (100 V/ns) for robust operation during fast switching transients Compatible with 3.3 V or 5 V input logic 1.5 A source/sink current capability Active Miller clamp with 5 A sink capability to avoid induced turn-on Active bootstrap clamping Suitable for driving GaN HEMTs or Si MOSFETs Qualified according to JEDEC for target applications Benefits High side driving and low side ground bounce immunity during fast switching transitions Optimized switching speed without external gate resistors, by choosing from the family of 1EDN71x6x drivers Induced turn-on immunity during fast switching transitions Regulated bootstrap voltage, by eliminating bootstrap capacitor overcharging during dead-time Potential Applications DC-DC Telecom Server AI Motor drives Robots Drones Power tools Class D audio Designers who used this product also designed with BSC074N15NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET TLF35584QVVS2 | OPTIREG™ PMIC TLE9351VSJ | Automotive CAN transceivers S26KS512SDPBHN020 | HYPERFLASH™ BSZ440N10NS3 G | N-Channel Power MOSFET BSZ123N08NS3 G | N-Channel Power MOSFET 2ED2181S06F | Gate driver ICs S25FL128LAGMFI010 | Quad SPI Flash IR3899AMTRPBF | Integrated POL Voltage Regulators BSC098N10NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET TLF35584QVVS2 | OPTIREG™ PMIC TLE9351VSJ | Automotive CAN transceivers S26KS512SDPBHN020 | HYPERFLASH™ BSZ440N10NS3 G | N-Channel Power MOSFET BSZ123N08NS3 G | N-Channel Power MOSFET 2ED2181S06F | Gate driver ICs 1 2 3