Infineon Technologies AG Gate Driver ICs 2ED2181S06F

650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-8 package 650 V high and low side gate driver with high current, and high speed to drive MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21814S06J. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost Floating channel designed for bootstrap operation Maximum supply voltage of 25 V Independent under voltage lockout (UVLO) for both channels 200 ns propagation delay HIN, LIN input logic Logic Operational up to –11 V on VS Pin Negative Voltage Tolerance On Inputs of –5 V The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin Applications Commercial HVAC Cordless power tools and outdoor power equipment Home appliances Motor Control Power conversion Find our Variations for 2ED2181S06F Part No Package Input logic Interlock Deadtime 2ED21814S06J DSO - 14 HIN, LIN No None 2ED2182S06F DSO - 8 HIN, LIN Yes Internal 400 ns 2ED21824S06J DSO - 14 HIN, LIN Yes Programmable 400 ns - 5000 ns 2ED2183S06F DSO - 8 HIN, /LIN Yes Internal 400 ns 2ED21834S06J DSO – 14 HIN, /LIN Yes Programmable 400 ns - 5000 ns 2ED2184S06F DSO - 8 IN, /SD Yes Internal 400 ns 2ED21844S06J DSO – 14 IN, /SD Yes Programmable 400 ns - 5000 ns Part No Package Input logic Interlock Deadtime Designers who used this product also designed with S26KS512SDPBHN020 | HYPERFLASH™ BSC110N15NS5 | N-Channel Power MOSFET IMBF170R650M1 | Silicon Carbide MOSFET Discretes 1EDN7126U | Gate driver ICs S25FL128LAGMFI010 | Quad SPI Flash IR3899AMTRPBF | Integrated POL Voltage Regulators BSC098N10NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET TLF35584QVVS2 | OPTIREG™ PMIC BSZ440N10NS3 G | N-Channel Power MOSFET BSZ123N08NS3 G | N-Channel Power MOSFET S26KS512SDPBHN020 | HYPERFLASH™ BSC110N15NS5 | N-Channel Power MOSFET IMBF170R650M1 | Silicon Carbide MOSFET Discretes 1EDN7126U | Gate driver ICs S25FL128LAGMFI010 | Quad SPI Flash IR3899AMTRPBF | Integrated POL Voltage Regulators BSC098N10NS5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET 1 2 3