Infineon Technologies AG Gate Driver ICs 2EDF8275F

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF8275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI (Common Mode Noise Immunity). The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1A/2A peak current product variant, the EiceDRIVER™ 2EDF8275F, is available in the DSO-16 narrow body package with 4mm creepage distance. Summary of Features Fast power switching with accurate timing Optimized for area and low cost system BOM Robust design against switching noise Output-to-output channel isolation Input-to-output channel isolation Benefits Power efficiency and high resolution PWM control Cooler package at smaller form factor Protection and safe operation Flexible assignment of any driver channel Floating gate drive & regulatory safety Potential Applications Telecom DC-DC Server Industrial SMPS UPS Battery EV-Charging Smart Grid System Values Enabling higher power stage efficiency and higher power density designs Improving long term competitive cost position, integration and mass manufacturability Improved end-product lifetime by improved safe operation of power switches Lower EMI by ground isolation, driver proximity to MOSFETs or use of Kelvin source MOSFETs Meeting requirements to build isolated AC-DC, DC-DC half bridges topologies Applications Telecommunication infrastructure Designers who used this product also designed with IPB107N20N3 G | N-Channel Power MOSFET IPB65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R030M1H | Silicon Carbide MOSFET Discretes IPP016N08NF2S | N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IPB107N20N3 G | N-Channel Power MOSFET IPB65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R030M1H | Silicon Carbide MOSFET Discretes IPP016N08NF2S | N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 1 2