Single-channel isolated gate-driver IC in 150 mil DSO-8 package
The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V.
The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II).
Summary of Features
3 kVrms galvanic isolation
UL 1577 certification
300 V/ns CMTI
Low output impedance
+6/-4 ns propagation delay accuracy
20 ns (typ.) output clamping speed
UVLO_OFF of 8 V
Benefits
Excellent immunity against switching noise
Hardware-based protection to stay in safe operation area (SOA)
Shoot-through protection during start-up
Low MOSFET switching-losses
Low dead-time losses
Potential Applications
Server SMPS
Telecom SMPS
EV-Charger
DC/AC
UPS
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
Electric vehicle (EV) drivetrain system
Light electric vehicles (LEV)
Power conversion
Designers who used this product also designed with
IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IQE006NE2LM5CG | N-Channel Power MOSFET
BSZ070N08LS5 | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IQD009N06NM5CG | N-Channel Power MOSFET
IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC146N10LS5 | N-Channel Power MOSFET
IDL12G65C5 | CoolSiC™ Schottky Diodes
BSZ22DN20NS3 G | N-Channel Power MOSFET
BSO301SP H | P-Channel Power MOSFET
IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IMBG120R053M2H | Silicon Carbide MOSFET Discretes
IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IQE006NE2LM5CG | N-Channel Power MOSFET
BSZ070N08LS5 | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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Single-channel isolated gate-driver IC in 150 mil DSO-8 package
The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V.
The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II).
Summary of Features
- 3 kVrms galvanic isolation
- UL 1577 certification
- 300 V/ns CMTI
- Low output impedance
- +6/-4 ns propagation delay accuracy
- 20 ns (typ.) output clamping speed
- UVLO_OFF of 8 V
Benefits
- Excellent immunity against switching noise
- Hardware-based protection to stay in safe operation area (SOA)
- Shoot-through protection during start-up
- Low MOSFET switching-losses
- Low dead-time losses
Potential Applications
- Server SMPS
- Telecom SMPS
- EV-Charger
- DC/AC
- UPS
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- Electric vehicle (EV) drivetrain system
- Light electric vehicles (LEV)
- Power conversion
Designers who used this product also designed with
- IPDD60R080G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMBG120R053M2H |
Silicon Carbide MOSFET Discretes
- IPT60R080G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPD65R225C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPDD60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IQE006NE2LM5CG |
N-Channel Power MOSFET
- BSZ070N08LS5 |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IQD009N06NM5CG |
N-Channel Power MOSFET
- IPT60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R028G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL60R285P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPN95R3K7P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC146N10LS5 |
N-Channel Power MOSFET
- IDL12G65C5 |
CoolSiC™ Schottky Diodes
- BSZ22DN20NS3 G |
N-Channel Power MOSFET
- BSO301SP H |
P-Channel Power MOSFET
- IPDD60R080G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMBG120R053M2H |
Silicon Carbide MOSFET Discretes
- IPT60R080G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPD65R225C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPDD60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IQE006NE2LM5CG |
N-Channel Power MOSFET
- BSZ070N08LS5 |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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