Infineon Technologies AG Power - Gate Driver ICs - 1EDB8275F 1EDB8275F

Description
Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V. The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II). Summary of Features 3 kVrms galvanic isolation UL 1577 certification 300 V/ns CMTI Low output impedance +6/-4 ns propagation delay accuracy 20 ns (typ.) output clamping speed UVLO_OFF of 8 V Benefits Excellent immunity against switching noise Hardware-based protection to stay in safe operation area (SOA) Shoot-through protection during start-up Low MOSFET switching-losses Low dead-time losses Potential Applications Server SMPS Telecom SMPS EV-Charger DC/AC UPS Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Electric vehicle (EV) drivetrain system Light electric vehicles (LEV) Power conversion Designers who used this product also designed with IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes BSZ22DN20NS3 G | N-Channel Power MOSFET BSO301SP H | P-Channel Power MOSFET IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V. The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II). Summary of Features 3 kVrms galvanic isolation UL 1577 certification 300 V/ns CMTI Low output impedance +6/-4 ns propagation delay accuracy 20 ns (typ.) output clamping speed UVLO_OFF of 8 V Benefits Excellent immunity against switching noise Hardware-based protection to stay in safe operation area (SOA) Shoot-through protection during start-up Low MOSFET switching-losses Low dead-time losses Potential Applications Server SMPS Telecom SMPS EV-Charger DC/AC UPS Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Electric vehicle (EV) drivetrain system Light electric vehicles (LEV) Power conversion Designers who used this product also designed with IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes BSZ22DN20NS3 G | N-Channel Power MOSFET BSO301SP H | P-Channel Power MOSFET IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 1EDB8275F - 1EDB8275F - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 1EDB8275F
1EDB8275F
Power - Gate Driver ICs - 1EDB8275F 1EDB8275F
Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V. The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II). Summary of Features 3 kVrms galvanic isolation UL 1577 certification 300 V/ns CMTI Low output impedance +6/-4 ns propagation delay accuracy 20 ns (typ.) output clamping speed UVLO_OFF of 8 V Benefits Excellent immunity against switching noise Hardware-based protection to stay in safe operation area (SOA) Shoot-through protection during start-up Low MOSFET switching-losses Low dead-time losses Potential Applications Server SMPS Telecom SMPS EV-Charger DC/AC UPS Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Electric vehicle (EV) drivetrain system Light electric vehicles (LEV) Power conversion Designers who used this product also designed with IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC146N10LS5 | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes BSZ22DN20NS3 G | N-Channel Power MOSFET BSO301SP H | P-Channel Power MOSFET IPDD60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMBG120R053M2H | Silicon Carbide MOSFET Discretes IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD65R225C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

Single-channel isolated gate-driver IC in 150 mil DSO-8 package

The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the gate driver is optimized for fast-switching applications with high system-level efficiencies. To support functionally safe system operation the common-mode transient immunity (CMTI) exceeds 300 V/ns, the typical output stage clamping speed is as short as 20 ns, and output-stage undervoltage lock-out (UVLO) of 8.0 V.

The 1EDB8275F is available in an 8-pin DSO package. The industry-standard pinout has separate source and sink output pins to ease application design tasks. this single-channel isolated gate driver IC solves PCB-layout problems in high-power factor controllers (PFC) and high-voltage DCDC stages. Applications also include multi-level topologies and use-cases with 557 Vrms working voltage (pollution class II).


Summary of Features

  • 3 kVrms galvanic isolation
  • UL 1577 certification
  • 300 V/ns CMTI
  • Low output impedance
  • +6/-4 ns propagation delay accuracy
  • 20 ns (typ.) output clamping speed
  • UVLO_OFF of 8 V

Benefits

  • Excellent immunity against switching noise
  • Hardware-based protection to stay in safe operation area (SOA)
  • Shoot-through protection during start-up
  • Low MOSFET switching-losses
  • Low dead-time losses

Potential Applications

  • Server SMPS
  • Telecom SMPS
  • EV-Charger
  • DC/AC
  • UPS

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Electric vehicle (EV) drivetrain system
  • Light electric vehicles (LEV)
  • Power conversion

Designers who used this product also designed with


  • IPDD60R080G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMBG120R053M2H |
    Silicon Carbide MOSFET Discretes
  • IPT60R080G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD65R225C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQD009N06NM5CG |
    N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R285P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPN95R3K7P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • IDL12G65C5 |
    CoolSiC™ Schottky Diodes
  • BSZ22DN20NS3 G |
    N-Channel Power MOSFET
  • BSO301SP H |
    P-Channel Power MOSFET
  • IPDD60R080G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMBG120R053M2H |
    Silicon Carbide MOSFET Discretes
  • IPT60R080G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD65R225C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 1EDB8275F
Product Name Power - Gate Driver ICs - 1EDB8275F
Driver Type High-side
Output Current 5.4 amps
Supply Voltage 3 to 15 volts
Propagation Delay 45 ns
Unlock Full Specs
to access all available technical data

Similar Products

Power - Gate Driver ICs - 2EDR8259H - 2EDR8259H - Infineon Technologies AG
Specs
Driver Type High-side; Low-side; Dual Gate Driver
Output Current 5 amps
Supply Voltage 3 to 17 volts
View Details
Gate Driver ICs - 2EDN8534F - Infineon Technologies AG
Infineon Technologies AG
Specs
Driver Type Low-side
Output Current 5 amps
Supply Voltage 8 to 20 volts
View Details
Gate Driver ICs - 2ED2108S06F - Infineon Technologies AG
Infineon Technologies AG
Specs
Driver Type Dual Gate Driver
Output Current 0.2900 amps
Supply Voltage 10 to 20 volts
View Details
2 suppliers