Infineon Technologies AG Bipolar Transistors - BJT MMBTA06LT1XT

MMBTA06LT1XT is an NPN silicon bipolar junction transistor for amplification and switching applications in low-power circuits, housed in an SOT23 package. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a peak collector current of 1 A. The collector-emitter saturation voltage is no more than 0.25 V at 100 mA collector current and 10 mA base current. The DC current gain ranges from 100 to unspecified upper limits at collector currents of 10 mA and 100 mA with V_CE = 1 V. The transition frequency is 100 MHz at 20 mA collector current and 5 V collector-emitter voltage. The junction temperature rating is 150 °C. The device is RoHS compliant and qualified to AEC-Q101.