Infineon Technologies AG High Reliability - Space - Power - Rad hard power ICs - RIC7S113L4SCB RIC7S113L4SCB

Rad hard high and low side gate driver - MIL-PRF-38535 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100 krad(Si) and single effect effects (SEE) characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. Summary of features Independent high and low side gate driver Independent bias supply for logic and power with ±5V offset Wide bias supply voltage range Undervoltage lockout for both channels CMOS Schmitt trigger inputs with internal pull-down resistor Integrated level shift for high side drive Cycle by cycle edge triggered shutdown logic pin Matched propagation delay for both channels Hermetically sealed package Lightweight Total ionizing dose (TID) hardness High dose rate (50-300 rad(Si)/s) of 100 krad(Si) Single event effect (SEE) hardness Safe operating area (SOA) defined for no SEB, SEGR up to LET of 81.9 MeV·cm2/mg SET characterized up to LET of 81.9 MeV·cm2/mg Benefits Reduce size and weight by eliminating bulky gate drive transformers Increase reliability over opto-coupler based gate driver designs 50 V/ns transient immunity for robust high-speed switching Potential applications Satellite bus and payload Power conditioning unitP Power distribution unit DC-DC converter Motor drive Similar Parts RIC7S113A4SCB 883 Level B Screening RIC7S113A4SCS 883 Level S Screening RIC7S113L4 COTS RIC7S113E4 COTS RIC7S113C4CDV COTS RIC7S113A4 COTS RIC7S113C4CDH MIL-PRF-38535 Level B Screening RIC7S113C4CDK MIL-PRF-38535 Level S Screening RIC7S113L4SCB MIL-PRF-38535 Level B Screening RIC7S113L4SCB MIL-PRF-38535 Level B Screening RIC7S113L4SCS MIL-PRF-38535 Level S Screening RIC7S113E4SCS MIL-PRF-38535 Level S Screening