The PTFB082817FH is a thermally-enhanced LDMOS FET designed for multi-standard cellular power amplifier applications in the 791-821 MHz range, delivering 280 W peak output power at 30 V. It features internal input and output matching, high gain of 19.3 dB, and operates with 35% efficiency under two-carrier WCDMA conditions. The device is packaged in a ceramic open-cavity, earless flange H-34288-4/2 case, supports a maximum junction temperature of 200 °C, and has a thermal resistance of 0.215 °C/W. It is RoHS compliant and capable of withstanding a 10:1 VSWR at full output power. The part includes integrated ESD protection and an extended negative gate-source voltage range for improved Doherty amplifier performance.
Win Source Part Number: 1021384-PTFB082817FH
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 35
Voltage - Rated: 65 V
Frequency: 821MHz
Current - Test: 2.15 A
Gain: 19.3dB
Transistor Type: LDMOS
Voltage - Test: 28 V
Power - Output: 60W
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-34288-4/2
ECCN: OBSOLETE
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Infineon Technologies
Other Names: SP000891180
Product Status: Obsolete
| Win Source Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 1021384-PTFB082817FHV1XWSA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF |
| Output Power | 60 watts |
