Infineon Technologies AG Single Bipolar Transistors PZTA42E6327HTSA1

Description
Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 1.5W Surface Mount PG-SOT223-4
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 1.5W Surface Mount PG-SOT223-4
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - PZTA42E6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
PZTA42E6327HTSA1TR-ND
Single Bipolar Transistors PZTA42E6327HTSA1TR-ND
Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 1.5W Surface Mount PG-SOT223-4

Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 1.5W Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PZTA42E6327HTSA1 - 1090871-PZTA42E6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PZTA42E6327HTSA1
1090871-PZTA42E6327HTSA1
TRANSISTORS - Transistors (BJT) - Single - PZTA42E6327HTSA1 1090871-PZTA42E6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1090871-PZTA42E6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 70MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1090871-PZTA42E6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 70MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Max Vce (sat): 500mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 30mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PZTA42E6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PZTA42E6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PZTA42E6327HTSA1
TRANS NPN 300V 0.5A SOT223-4

TRANS NPN 300V 0.5A SOT223-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number PZTA42E6327HTSA1TR-ND 1090871-PZTA42E6327HTSA1 PZTA42E6327HTSA1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PZTA42E6327HTSA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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