Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF PTFA261301F V1

The PTFA261301F is a thermally-enhanced, internally-matched LDMOS FET designed for high-power RF applications in the 2.62-2.68 GHz range, delivering 130 W average output power. It uses an H-31260-2 package with a thermally-enhanced earless flange, single-ended design. The device supports continuous wave output up to 152 W at 28 V with 47% drain efficiency and features integrated ESD protection rated at Human Body Model Class 2. It operates with a gate-source voltage range of -0.5 to +12 V, a drain-source voltage of up to 65 V, and a maximum junction temperature of 200°C. Thermal resistance from junction to case is 0.39°C/W under 130 W CW conditions. The part is RoHS-compliant with Pb-free packaging and is characterized for CDMA, CDMA2000, Super3G, and WiMAX architectures.