Infineon Technologies AG Bipolar Transistors - BJT MMBT3904LT1XT

Description
Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A
Description
Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A
Datasheet
Datasheet Summary
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MMBT3904LT1XT is an NPN silicon switching transistor in SOT23 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 200 mA, and a total power dissipation of 330 mW at ambient temperatures up to 71°C. The transistor exhibits a DC current gain ranging from 30 to 300 depending on collector current, with a collector-emitter saturation voltage of up to 0.2 V at 10 mA collector current and 1 mA base current. It features a transition frequency of 300 MHz and complies with AEC Q101 and RoHS standards. The device operates with a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C.

Datasheet Summary
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MMBT3904LT1XT is an NPN silicon switching transistor in SOT23 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 200 mA, and a total power dissipation of 330 mW at ambient temperatures up to 71°C. The transistor exhibits a DC current gain ranging from 30 to 300 depending on collector current, with a collector-emitter saturation voltage of up to 0.2 V at 10 mA collector current and 1 mA base current. It features a transition frequency of 300 MHz and complies with AEC Q101 and RoHS standards. The device operates with a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MMBT3904LT1XT
Bipolar Transistors - BJT MMBT3904LT1XT
Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A

Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MMBT3904LT1XT
Product Name Bipolar Transistors - BJT
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