Infineon Technologies AG RF FETs, MOSFETs PTFA092201E V1

Description
RF Mosfet LDMOS 30V 1.85A 960MHz 18.5dB 220W H-36260-2
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Description
RF Mosfet LDMOS 30V 1.85A 960MHz 18.5dB 220W H-36260-2
Request a Quote
Datasheet
Datasheet Summary
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The PTFA092201E is a 220-watt, internally matched LDMOS FET designed for EDGE and WCDMA applications in the 920 to 960 MHz band. It is packaged in an H-36260-2 case and operates at a drain voltage of 30 V with a quiescent drain current of 1850 mA. The device provides a typical CW output power at P-1dB of 250 W, a gain of 17.5 dB, and 59% drain efficiency at 960 MHz. It features integrated ESD protection compliant with Human Body Model Class 2, thermal stability, and capability to handle 10:1 VSWR at 30 V. The part is RoHS compliant and thermally enhanced for improved reliability.

Datasheet Summary
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The PTFA092201E is a 220-watt, internally matched LDMOS FET designed for EDGE and WCDMA applications in the 920 to 960 MHz band. It is packaged in an H-36260-2 case and operates at a drain voltage of 30 V with a quiescent drain current of 1850 mA. The device provides a typical CW output power at P-1dB of 250 W, a gain of 17.5 dB, and 59% drain efficiency at 960 MHz. It features integrated ESD protection compliant with Human Body Model Class 2, thermal stability, and capability to handle 10:1 VSWR at 30 V. The part is RoHS compliant and thermally enhanced for improved reliability.

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - PTFA092201EV1-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
PTFA092201EV1-ND
RF FETs, MOSFETs PTFA092201EV1-ND
RF Mosfet LDMOS 30V 1.85A 960MHz 18.5dB 220W H-36260-2

RF Mosfet LDMOS 30V 1.85A 960MHz 18.5dB 220W H-36260-2

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number PTFA092201EV1-ND
Product Name RF FETs, MOSFETs
Package Type H-36260-2
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