The IS45S16400J-6BLA2-TR is a 64Mb synchronous dynamic RAM (SDRAM) from Quarktwin Technology Ltd., organized as 1 Meg bit x 16 bits x 4 banks. It operates with a single 3.3V power supply and supports clock frequencies of 200, 166, 143, and 133 MHz. The device features a fully synchronous interface with all signals referenced to the positive edge of the clock, allowing for high-speed data transfer through a pipeline architecture. This memory chip includes programmable burst lengths of 1, 2, 4, 8, or full page, and supports both sequential and interleave burst sequences. It has self-refresh modes and auto-refresh capabilities, with a refresh count of 4096 cycles every 64 ms for commercial and industrial grades, or every 16 ms for automotive grade A2. The device also allows for random column addressing every clock cycle and has programmable CAS latency options of 2 or 3 clocks. The IS45S16400J-6BLA2-TR is available in multiple package options, including a 54-pin TSOP II and various TF-BGA configurations, and is suitable for a range of operating temperature conditions, from commercial (0¬8C to +70¬8C) to automotive grades (up to +105¬8C). This product is designed for applications requiring high-speed memory access and efficient data handling.
IC DRAM 64MBIT PARALLEL 54TFBGA Product overview: IS45S16400J-6BLA2-TR
SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4ns 54-TFBGA (8x8)
Win Source Part Number: 1355127-IS45S16400J-
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 105°C (TA)
Fake Threat In the Open Market: 60 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Base Product Number: IS45S16400
Technology: SDRAM
Mounting Type: Surface Mount
HTSUS: 8542.32.0002
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 3V ~ 3.6V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 64Mbit
Memory Organization: 4M x 16
Memory Interface: Parallel
Clock Frequency: 166 MHz
Access Time: 5.4 ns
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 64MBIT PARALLEL 54TFBGA
IC DRAM 64MBIT PARALLEL 54TFBGA
Automotive (-40 to +105C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 ball BGA (8x8mm) RoHS, T&R
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS45S16400J-6BLA2-TR | IS45S16400J-6BLA2-TR-ND | 1355127-IS45S16400J-6BLA2-TR | IS45S16400J-6BLA2-TR | IS45S16400J-6BLA2-TR | IS45S16400J-6BLA2-TR | 29X5334 |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | Automotive (-40 To +105C), 64M, 3.3V, Sdram, 4Mx16, 166Mhz, 54 Ball Bga (8X8Mm) Rohs, T&r Integrated Silicon Solution (Issi) |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Address Bus Width | 16 bits | ||||||
| Package Type | BGA; Tape & Reel (TR) | 54-TFBGA | BGA; 54-TFBGA | BGA |
